Microstructure and Ferroelectric Properties of (Bi0:9 Ho0:1)3:999Ti2:997V0:003O12 Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

J Mater Sci Technol ›› 2010, Vol. 26 ›› Issue (8): 679-681.

• Thin Film and Coatings • Previous Articles Next Articles

Microstructure and Ferroelectric Properties of (Bi_0:9 Ho_0:1)_3:999Ti_2:997V_0:003O₁₂ Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

Chengju Fu, Zhixiong Huang, Jie Li, Dongyun Guo

1) School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
2) School of Mechanical Engineering, Chongqing University of Science and Technology, Chongqing 400042, China

Received:2009-04-08 Revised:2010-01-22 Online:2010-08-28 Published:2010-08-23
Contact: Dongyun GUO
Supported by:
the Young Scientists Fund of the National Natural Science Foundation of China under grant No. 50902108

Abstract

Abstract:

The (Bi_0.9Ho_0.1)_3.999Ti _2.997 V_0.003O₁₂ (BHTV) films have been prepared on Pt/Ti/SiO₂/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho³⁺/V⁵⁺ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6°C/cm², 2Ec of 265 kV/cm (at applied field of 420 kV/cm), dielectric constant of 305, dielectric loss of 0.031 (at 1 MHz), good insulting behavior, as well as the fatigue-free behavior.

Key words: (Bi_0.9Ho_0.1)_3.999Ti _2.997 V_0.003O₁₂ thin films, Sol-gel method, Co-substitution, Ferroelectric properties, Dielectric properties

Chengju Fu Zhixiong Huang Jie Li Dongyun Guo. Microstructure and Ferroelectric Properties of (Bi_0:9 Ho_0:1)_3:999Ti_2:997V_0:003O₁₂ Thin Films Prepared by Sol-gel Method for Nonvolatile Memory[J]. J Mater Sci Technol, 2010, 26(8): 679-681.

References

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Microstructure and Ferroelectric Properties of (Bi_0:9 Ho_0:1)_3:999Ti_2:997V_0:003O₁₂ Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

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