Effect of Tb Doping on Structural and Electrical Properties of BiFeO3 Thin Films Prepared by Sol–Gel Technique

doi:10.1016/j.jmst.2013.09.015

J. Mater. Sci. Technol.

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Effect of Tb Doping on Structural and Electrical Properties of BiFeO₃ Thin Films Prepared by Sol–Gel Technique

Guohua Dong, Guoqiang Tan, Wenlong Liu, Ao Xia, Huijun Ren

Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry, Ministry of Education, Shaanxi University of Science & Technology, Xi’an 710021, China

Received:2013-03-28 Revised:2013-05-07 Online:2014-04-15 Published:2014-04-22
Contact: G. Tan
Supported by:
National Natural Science Foundation of China (Grant No. 51172135); the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002092); Research and Special Projects of the Education Department of Shaanxi Province (Grant No. 12JK0445); the Graduate Innovation Fund of Shaanxi University of Science and Technology (SUST-A04).

Abstract

Abstract:

Bi_1−xTb_xFeO₃ thin films were prepared on SnO₂ (fluorine doped tin oxide) substrates by a sol–gel method. The structural and electrical properties of the BiFeO₃ thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFeO₃ films was shifted towards right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase. The Bi_0.89Tb_0.11FeO₃ thin film showed the well-developed P–E loops, which enhanced remnant polarization (Pr = 88.05 μC/cm²) at room temperature. The dielectric constant and dielectric loss of Bi_0.89Tb_0.11FeO₃ thin film at 100 kHz were 185 and 0.018, respectively. Furthermore, the Bi_0.89Tb_0.11FeO₃ thin film showed a relatively low leakage current density of 2.07 × 10⁻⁵ A/cm² at an applied electric field of 150 kV/cm. The X-ray photoelectron spectroscopy (XPS) spectra indicated that the presence of Fe²⁺ ions in the Bi_0.89Tb_0.11FeO₃ thin film was less than that in the pure BiFeO₃.

Key words: BiFeO₃ thin films, Tb doping, Solegel method, Ferroelectric properties

Guohua Dong, Guoqiang Tan, Wenlong Liu, Ao Xia, Huijun Ren. Effect of Tb Doping on Structural and Electrical Properties of BiFeO₃ Thin Films Prepared by Sol–Gel Technique[J]. J. Mater. Sci. Technol., DOI: 10.1016/j.jmst.2013.09.015.

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Effect of Tb Doping on Structural and Electrical Properties of BiFeO₃ Thin Films Prepared by Sol–Gel Technique

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