Enhanced Ferroelectric Properties of Predominantly (100)-oriented Ca0:4Sr 0:6Bi4Ti4O15 Thin Films on Pt/Ti /SiO2/Si Substrates

J Mater Sci Technol ›› 2010, Vol. 26 ›› Issue (11): 981-985.

• Thin Film and Coatings • Previous Articles Next Articles

Enhanced Ferroelectric Properties of Predominantly (100)-oriented Ca_0:4Sr _0:6Bi₄Ti₄O₁₅ Thin Films on Pt/Ti /SiO₂/Si Substrates

Suhua Fan, Quande Che, Fengqing Zhang, Ran Yu and Wei Hu

College of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China

Received:2009-09-21 Revised:2010-02-04 Online:2010-11-30 Published:2010-11-22
Contact: Suhua Fan
Supported by:
the National Natural Science Foundation of China (Grant No. 50872075) and the Natural Science Foundation of Shandong Province, China (Grant No. Y2007F36)

Abstract

Abstract: Predominantly (100)-oriented Ca_0.4Sr_0.6Bi₄Ti₄O₁₅ (C_0.4S_0.6BTi) thin films were prepared on Pt(111)/Ti/SiO₂/Si substrates by a sol-gel method at annealing temperatures ranging from 650°C to 850°C. The growth mode of the predominantly (100)-oriented C_0.4S_0.6BTi thin films fabricated by the sequential layer annealing method was discussed based on the structure evolution with the annealing temperature. The remnant polarization and coercive field of the C0.4S0.6BTi film annealed at 800°C are 16.1μC/cm²and 85kV/cm, respectively. No evident fatigue can be observed after 10⁹ switching cycles.

Key words: Ca_0.4Sr_0.6Bi₄Ti₄O₁₅, Ferroelectric film, Orientation

Che QuanDeSuhua Fany, Quande Che, Fengqing Zhang, Ran Yu and Wei Hu. Enhanced Ferroelectric Properties of Predominantly (100)-oriented Ca_0:4Sr _0:6Bi₄Ti₄O₁₅ Thin Films on Pt/Ti /SiO₂/Si Substrates[J]. J Mater Sci Technol, 2010, 26(11): 981-985.

References

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Enhanced Ferroelectric Properties of Predominantly (100)-oriented Ca_0:4Sr _0:6Bi₄Ti₄O₁₅ Thin Films on Pt/Ti /SiO₂/Si Substrates

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