J Mater Sci Technol ›› 2009, Vol. 25 ›› Issue (06): 785-788.

• Articles • Previous Articles     Next Articles

Effects of Substrate Temperature on the Properties of Mo-doped ZnO Films Prepared by RF Magnetron Sputtering

Xianwu Xiu1), Yuping Cao1), Zhiyong Pang2), Shenghao Han2,3)   

  1. 1) College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
    2) School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
    3) School of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China
  • Received:2008-05-26 Revised:2009-08-14 Online:2009-11-28 Published:2009-11-24
  • Contact: Shengshen Han
  • Supported by:

    the Natural Science Foundation of China (Grant Nos. 60676041 and 10778701)

Abstract:

Transparent conducting molybdenum-doped zinc oxide (MZO) films were successfully prepared by radio frequency (RF) magnetron sputtering method on glass substrates under different substrate temperatures. The nature of MZO film is polycrystalline with hexagonal structure and a preferred orientation along c-axis. With increasing substrate temperature from room temperature to 400°C, the crystallinity of the films is deteriorated and the resistivity increases sharply due to both the decrease of carrier concentration and Hall mobility. The lowest resistivity achieved is 9.2×10-4 ­Ω· cm with a high Hall mobility of 30 cm2·V-1·s-1 for the film deposited at room temperature. The average transmittance in the visible range exceeds 85% for all the samples. The optical band gap decreases from 3.30 to 3.25 eV with substrate temperature from room temperature to 400°C.

Key words: Zinc oxide, Molybdenum, Substrate temperature, Magnetron sputtering