J Mater Sci Technol ›› 2009, Vol. 25 ›› Issue (05): 677-680.

• Articles • Previous Articles     Next Articles

Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots

Hui She, Biao Wang   

  1. 1) School of Engineering, Sun Yat-Sen University, Guangzhou 510275, China
    2) Guangdong Provincial Academy of Building Research, Guangzhou 510500, China
  • Received:2008-08-27 Revised:2009-03-12 Online:2009-09-28 Published:2009-10-10
  • Contact: Biao Wang
  • Supported by:

    the National Natural Science Foundation of China (No. 10572155 and 10732100),
    Guangdong Science and Technology Bureau (No. 2006A11001002),
    The Ministry of Education of China.

Abstract:

The vertical and lateral interactions in a multisheet array of InAs/GaAs quantum dots are analyzed by finite element method (FEM). It is shown that due to the effects of vertical interaction, nucleation prefers to happen above buried quantum dots (QDs). Meanwhile, the effects of lateral interaction adjust the spacing of lateral neighboring QDs. The vertical coupling becomes strong with deceasing GaAs spacer height and increasing number of buried layers, while the lateral coupling becomes strong with increasing InAs wetting layer thickness. The phenomenon that, after successive layers, the spacing and size of QDs islands become progressively more uniform is explained according to the minimum potential energy theory.

Key words: Quantum dots, Vertical and lateral interactions, Finite element analysis