J Mater Sci Technol ›› 1993, Vol. 9 ›› Issue (3): 232-234.

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Nano-Structure Observed in Highly Doped Silicon Crystalline

Zhiheng LU Department of Physics,Beijing Normal University,Beijing,100875,ChinaDachan WANG Yan LUO Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing,100875,China   

  • Received:1993-05-28 Revised:1993-05-28 Online:1993-05-28 Published:2009-10-10

Abstract: It was reported that due to the non-linear electrical phenomena,the super-saturated arsenic in silicon single crystalline precipitates during post processing at low temperatures to form different structures.The structure with spatial period of 1.7 to 2.3 nm was observed firstly by TEM on the sample.

Key words: nano-structure, silicon, semiconductor materials