Abstract: Schottky contacts have attracted widespread attention from both the electronic device industry and researchers since their discovery. The Schottky characteristics make these contacts highly suitable for use in field-effect transistors (FETs), photodetectors (PDs), solar cells (SCs), resistive-switching memories (RSMs), thin-film transistors (TFTs), etc. However, how do Schottky contacts affect the device performance? The answer lies simply in the Schottky parameters. This review focuses on the extraction of Schottky parameters, i.e., the Schottky barrier height (SBH), ideality factor (IF), and series resistance (SR), from the current-voltage (I-V) curve to understand and analyze the characteristics of Schottky devices. First, the current research progress in this field and the principles of Schottky contacts are presented. Second, this article delves into some classic and widely used extraction methods as well as the latest extraction methods, providing an objective evaluation based on their practical effectiveness. Then, several research applications, including studies that require extraction, simple extraction, and delicate extraction, are enumerated to demonstrate the necessity and importance of Schottky parameter analysis. Finally, an outlook and future research prospects are discussed based on recent progress, and a comprehensive summary is given.

Key words: Schottky parameter extraction, Photodetectors, Solar cells, Resistive-switching memory, Thin-film transistors