J. Mater. Sci. Technol. ›› 2017, Vol. 33 ›› Issue (10): 1107-1112.DOI: 10.1016/j.jmst.2017.07.006

• Orginal Article • Previous Articles     Next Articles

Electron-beam irradiation induced optical transmittance enhancement for Au/ITO and ITO/Au/ITO multilayer thin films

Wei Wenzuo, Hong Ruijin*(), Wang Jinxia, Tao Chunxian, Zhang Dawei   

  1. Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China
  • Received:2017-03-16 Revised:2017-04-25 Accepted:2017-05-09 Online:2017-10-25 Published:2018-01-25
  • Contact: Hong Ruijin
  • About author:

    1 These two authors contributed equally to this paper.

Abstract:

Electron beam (EB) irradiation experiments on Au/ITO and ITO/Au/ITO multilayer thin films are reported. The structure and the optical-electrical properties of the samples were investigated by X-ray diffraction, atomic force microscopy, four-point probe resistivity measurement system, and UV-vis-NIR double beam spectrometer, respectively. Those results show that the EB irradiation has the effects of improving the crystalline of samples, widening the optical band gap of both thin films, reducing the sheet resistance, and improving the transmittance of samples.

Key words: EB irradiation, Multilayer thin films, Structure, Optical-electrical properties, Transmittance