J Mater Sci Technol ›› 2009, Vol. 25 ›› Issue (02): 233-236.

• Articles • Previous Articles     Next Articles

La-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

Xing'ao Li1,2)†, Jianping Yang1,2), Anyou Zuo1), Zuobin Yuan1), Zuli Liu3)
and Kailun Yao3,4)   

  1. 1) College of Mathematic and Physics, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
    2) School of Science, Hubei Institute for Nationalities, Enshi 445000, China
    3) Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
    4) International Center of Material Physics, Chinese Academy of Science, Shenyang 110016, China
  • Received:2007-10-09 Revised:2008-04-15 Online:2009-03-28 Published:2009-10-10
  • Contact: Xing'ao Li
  • Supported by:

    the National Natural Science Foundation of China under grant No. 10574047
    the Key Program of the Education Branch of Hubei Province of China under grant No. D200529002
    the Key Program of the Ethnic Affairs Committee of China under grant No. 08HB05
    the Scientific Research Foundation of Nanjing University of Post Telecommunication under grant No. NY208025.

Abstract:

Copper nitride film (Cu3N) and La-doped copper nitride films (LaxCu3N) were prepared on glass substrates by reactive magnetron sputtering of a pure Cu and a pure La targets under N2 atmosphere. The results show that La-free film was composed of Cu3N crystallites with anti-ReO3 structure with (111) texture. The formation of the LaxCu3N films is affected strongly by La, and the peak intensity of the preferred crystalline [111]-orientation decreases with increasing the concentration of La. High concentration of La may prevent the formation of the Cu3N from crystallization. Compared with the Cu3N films, the resistivity of the LaxCu3N films have been decreased.

Key words: Copper nitride film, La-doped copper nitride films, Magnetron sputtering, Crystal structure