Abstract: We have realized efficient photopatterning and high-quality ZrO₂ films through combustion synthesis and manufactured resistive random access memory (RRAM) devices with excellent switching stability at low temperatures (250 °C) using these approaches. Combustion synthesis reduces the energy required for oxide conversion, thus accelerating the decomposition of organic ligands in the UV-exposed area, and promoting the formation of metal-oxygen networks, contributing to patterning. Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors, and the prepared combustion ZrO₂ films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice, along with an amorphous phase. Furthermore, the synergistic effect of combustion synthesis and UV/O₃-assisted photochemical activation resulted in patterned ZrO₂ films forming even more complete metal-oxygen networks. RRAM devices fabricated with patterned ZrO₂ films using combustion synthesis exhibited excellent switching characteristics, including a narrow resistance distribution, endurance of 10³ cycles, and retention for 10⁵ s at 85 °C, despite low-temperature annealing. Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.

Key words: ZrO₂, Combustion, Sol-gel, RRAM, Patterning