Abstract: This work presents solution-processed high-performance graphene quantum dots (GQDs) decorated amorphous InGaZnO (α-IGZO) thin-film transistors (TFTs) based on ZrO_x as gate dielectrics. Compare with pure IGZO TFTs, GQDs-modified α-IGZO TFTs devices with optimized doping content have demonstrated better performances, including a larger field-effect mobility (μ_FE) of 35.91 cm² V^-1 s^-1, a higher on/off current ratio (I_ON/I_OFF) of 5.04 × 10⁸, a smaller subthreshold swing (SS) of 0.11 V dec^-1 and a smaller interfacial trap states (D_it, 1.57 × 10¹² cm^-2). Moreover, the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml^-1 have shown excellent stability under bias stress and illumination stress conditions. To demonstrate the potential applications of α-IGZO TFTs in logic circuits, a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrO_x has been integrated, demonstrating good dynamic behavior and a high gain of 9.3. Low-frequency noise (LFN) characteristics of GQDs-IGZO/ZrO_x TFTs have suggested that the fluctuations in mobility are the noise source. Based on all the experimental findings, it can be concluded that solution-processed GQDs-IGZO/ZrO_x TFT may envision promising applications in optoelectronics.

Key words: Thin-film transistor, α-InGaZnO, Graphene quantum dots, Stability