Tune the electronic structure of MoS2 homojunction for broadband photodetection

doi:10.1016/j.jmst.2021.12.032

Abstract

Abstract:

Due to the weak absorption and low light-matter interaction of MoS₂, intrinsic MoS₂ photodetector usually has low photoresponse, thus limiting its real application. Herein, MoS₂ homojunction was constructed by using the chemical vapor deposition grown intrinsic MoS₂ films and the Nb-doped MoS₂ films. The results show that the Nb doping will induce p-type doping in MoS₂, where the electron concentration will decrease by 2.08 × 10¹² cm^-2 after Nb doping. By investigating the photoelectric effect of MoS₂/Nb-doped MoS₂ homojunction-based phototransistor, the tunability of the photoresponse, detectivity as the function of the external field, wavelength, and power of light have been studied in detail. The results show that the photoresponse and detectivity are strongly dependent on the gate voltage due to the external field tuned interlayer photoexcitation attributing to the band bending. The maximum of photoresponse can reach 51.4 A/W, the detectivity can reach 3.0 × 10¹² Jones, which is two orders higher than that of intrinsic MoS₂. Furthermore, by correlating the photoresponse and detectivity with the external field, it is found that the photodetection of MoS₂ homojunction can be significantly tuned and exhibit well photodetection in infrared. This comprehensive work not only sheds light on the tunable photoexcitation mechanism but also offers a strategy to achieve a high-performance photodetector.

Key words: Molybdenum disulfide, P-type doping, Homojunction, Photoresponse, Tunability

Rui Tao, Xianlin Qu, Zegao Wang, Fang Li, Lei Yang, Jiheng Li, Dan Wang, Kun Zheng, Mingdong Dong. Tune the electronic structure of MoS₂ homojunction for broadband photodetection[J]. J. Mater. Sci. Technol., 2022, 119: 61-68.

Figures/Tables 6

Fig. 1. Preparation and characterization of MoS2. (a) Schematic diagram of CVD-growth MoS2. (b-d) The OM diagrams of the intrinsic samples, 2Å-Nb-MoS2, and 5Å-Nb-MoS2, respectively. The inset shows the size distribution of the MoS2 single domain. (e, f) Photoluminescence and Raman spectra of the intrinsic and Nb-doped MoS2.

Fig. 2. IDPC images of Nb-doped MoS2 monolayer: (a) 2Å-Nb-MoS2 and (b) 5Å-Nb-MoS2. The red and purple arrows point out the brighter atomic images, representing (i) substitutional doping and (ii) interstitial doping, respectively. (c) Schematic diagram of doping results.

Fig. 3. MoS2 device and its electrical properties. (a, b) Schematic diagram and optical microscope of the electrode. (c, d) Output curves of the intrinsic samples and 2Å-Nb-MoS2. (e) Transfer curve of the intrinsic samples, 2Å-Nb-MoS2 and 5Å-Nb-MoS2, respectively, with a bias voltage of 1 V. (f) The threshold voltage, current ON/OFF ratio, and carrier mobility of the intrinsic samples, 2Å-Nb-MoS2, and 5Å-Nb-MoS2, respectively.

Fig. 4. Nb-MoS2/MoS2 homojunction and its photoelectric properties. (a) Schematic diagram of the homojunction composed of MoS2 and 2Å-Nb-MoS2. (b, c) The transfer curves of Nb-MoS2/MoS2 homojunction based phototransistor corresponding of illustrating under 550 nm and 700 nm light, responsivity, with a bias voltage of 8 V. (d) The photoresponse as the function of gate voltage at 550 nm light. (e, f) The contour plots of the device responsivity and detectivity as the function of gate voltage and wavelength.

Fig. 5. Photoelectric performance under gate voltage control. (a) The energy diagram of MoS2/Nb-doped MoS2 homojunction under the gate voltage. (b) The index of the exponent of the response of photocurrent response to laser power density (θ) with gate voltage at different wavelengths: 450 nm (left), and 700 nm (right). (c) Contour maps of external quantum efficiency (EQE) with the change of gate voltage and optical power: 550 nm (left), and 700 nm (right).

Table 1. Performance of different MoS2-based photodetectors

Material	Method	Thickness	R (A/W)	D* (Jones)	Bias voltage (V)	Refs.
Nb-MoS₂/MoS₂ homojunction	CVD with Nb doping	monolayer	50.4 (550 nm)	3.0 × 1012 (550 nm)	8	This work
p-MoS₂/MoS₂ homojunction	CVD with nitrogen plasma doping	monolayer	48.5 (532 nm)	∼10⁹ (532nm)	-10	[12]
MoS₂/BP	CVD/Mechanical exfoliation	monolayer	0.418 (633 nm)	/	-2	[54]
MoS₂/WS₂	Mechanical exfoliation	multilayer	1.42 (633 nm)	/	1	[55]
MoS₂/p-MoS₂	Mechanical exfoliation	multilayer	5.07 (500 nm)	3 × 10¹⁰ (500 nm)	1.5	[56]
MoS_2(1-_x₎Se₂_x	chemical solution deposition (CSD)	/	191.5 (650 nm)	∼10¹² (650 nm)	-0.5	[5]
MoS₂/Graphene	precursor solution printing and annealing	1-3 layers	0.835 (540 nm)	/	5	[57]
MoS₂/CuPc	CVD	monolayer	3000 (500nm)	2.0 × 10¹⁰ (500 nm)	15	[58]
MoS₂/n-Si	precursor solution-annealing	multilayer	11.9 (650nm)	2.1 × 10¹⁰ (650 nm)	-2	[11]
MoS₂/p-MoS₂	Mechanical exfoliation	multilayer	70000 (640 nm)	3.5 × 10¹⁴ (640 nm)	10	[52]
MoS₂/p-Si	CVD	4 layers	0.91 (808 nm)	1.8 × 10¹³ (808 nm)	-2	[59]
MoS₂	Pulsed laser deposition (PLD)	5-44 nm	0.0507 (445 nm)	1.55 × 10⁹ (445 nm)	10	[8]
MoS₂	Mechanical exfoliation	multilayer	0.0001 (980 nm)	∼10⁸ (980 nm)	1	[60]

References 60

[1]	Y. Wang, J.C. Kim, R.J. Wu, J. Martinez, X.J. Song, J.U. Yang, F. Zhao, A. Mkhoyan, H.Y. Jeong, M. Chhowalla, Nature 568 (2019) 70-74. DOI URL
[2]	M.C. Chang, P.H. Ho, M.F. Tseng, F.Y. Lin, C.H. Hou, I.K. Lin, H. Wang, P.P. Huang, C.H. Chiang, Y.C. Yang, I.T. Wang, H.Y. Du, C.Y. Wen, J.J. Shyue, C.W. Chen, K.H. Chen, P.W. Chiu, L.C. Chen, Nat. Commun. 11 (2020) 3682. DOI URL
[3]	B.L. Cao, Z.G. Wang, X.Y. Xiong, L.B. Gao, J.H. Li, M.D. Dong, New J. Chem. 45 (2021) 12033-12040. DOI URL
[4]	S.B. Desai, S.R. Madhvapathy, A.B. Sachid, J.P. Llinas, Q.X. Wang, G.H. Ahn, G. Pitner, M.J. Kim, J. Bokor, C. Hu, H.S.P. Wong, A. Javey, Science 354 (2016) 99-102. DOI URL
[5]	H. Xu, J.T. Zhu, G.F. Zou, W. Liu, X. Li, C.H. Li, G.H. Ryu, W.S. Xu, X.Y. Han, Z.X. Guo, J.H. Warner, J. Wu, H.Y. Liu, Nano-Micro Lett 12 (2020) 26. DOI URL
[6]	Q. Zhang, S.L. Zuo, P. Chen, C. F, Pan, InfoMat 3 (2021) 987-1007.
[7]	J.Y. Ma, X.Y. Chen, Y.C. Sheng, L. Tong, X.J. Guo, M.X. Zhang, C. Luo, L.Y. Zong, Y. Xia, C.M. Sheng, Y. Wang, S.F. Gou, X.Y. Wang, X. Wu, P. Zhou, D.W. Zhang, C.J. Wu, W.Z. Bao, J. Mater. Sci. Technol. 106 (2022) 243-248. DOI URL
[8]	Y. Xie, B. Zhang, S.X. Wang, D. Wang, A.Z. Wang, Z.Y. Wang, H.H. Yu, H.J. Zhang, Y.X. Chen, M.W. Zhao, B.B. Huang, L.M. Mei, J.Y. Wang, Adv. Mater. 29 (2017) 1605972.
[9]	X.W. Guan, X.C. Yu, D. Periyanagounder, M.R. Benzigar, J.K. Huang, C.H. Lin, J.Y. Kim, S. Singh, L. Hu, G. Liu, D. Li, J.H. He, F. Yan, Q.J. Wang, T. Wu, Adv. Optical Mater. 9 (2021) 2001708.
[10]	G.F. Rao, X.P. Wang, Y. Wang, P.H. Wangyang, C.Y. Yan, J.W. Chu, L.X. Xue, C.H. Gong, J.W. Huang, J. Xiong, Y.R. Li, InfoMat 1 (2019) 272-288. DOI URL
[11]	Y. Zhang, Y.Q. Yu, L.F. Mi, H. Wang, Z.F. Zhu, Q.Y. Wu, Y.G. Zhang, Y. Jiang, Small 12 (2016) 1062-1071. DOI PMID
[12]	J.J. Lu, Z.Y. Guo, W.Z. Wang, J.C. Lu, Y.S. Hu, J.H. Wang, Y.H. Xiao, X.Y. Wang, S.B. Wang, Y.F. Zhou, X. Zeng, Nanotechnology 32 (2021) 015701. DOI URL
[13]	X.L. Qu, Y.C. He, M.H. Qu, T.Y. Ruan, F.H. Chu, Z.L. Zheng, Y.B. Ma, Y.P. Chen, X.N. Ru, X.X. Xu, H. Yan, L.H. Wang, Y.Z. Zhang, X.J. Hao, Z. Hameiri, Z.G. Chen, L.Z. Wang, K. Zheng, Nat. Energy 6 (2021) 194-202. DOI URL
[14]	X.L. Luo, Z.H. Peng, Z.G. Wang, M.D. Dong, ACS Appl. Mater. Interfaces 13 (2021) 59154-59163. DOI URL
[15]	S. Ahmed, X. Ding, P.P. Murmu, N.N. Bao, R. Liu, J. Kennedy, L. Wang, J. Ding, T. Wu, A. Vinu, J.B. Yi, Small 16 (2020) 1903173. DOI URL
[16]	X.L. Lu, M.M. Yan, Z. Yan, W.Y. Chen, X.D. Sui, J.Y. Hao, W.M. Liu, Tribol. Int. 156 (2021) 106844. DOI URL
[17]	L. Tang, R.Z. Xu, J.Y. Tan, Y.T. Luo, J.Y. Zou, Z.T. Zhang, R.J. Zhang, Y. Zhao, J.H. Lin, X.L. Zou, B.L. Liu, H.M. Cheng, Adv. Funct. Mater. 31 (2021) 2006941.
[18]	P. Zhang, N.Y. Cheng, M.J. Li, B. Zhou, C. Bian, Y. Wei, X.G. Wang, H.N. Jiang, L.H. Bao, Y.F. Lin, Z.G. Hu, Y. Du, Y.J. Gong, ACS Appl. Mater. Interfaces 12 (2020) 18650-18659. DOI URL
[19]	Z.Y. Qin, L. Loh, J. Wang, X.M. Xu, Q. Zhang, B. Haas, C. Alvarez, H. Okuno, J.Z. Yong, T. Schultz, N. Koch, J. Dan, S.J. Pennycook, D.W. Zeng, M. Bosman, G. Eda, ACS Nano 13 (2019) 10768-10775. DOI URL
[20]	I. Lazi ´c, E.G.T. Bosch, S. Lazar, Ultramicroscopy 160 (2016) 265-280. DOI URL
[21]	B.Y. Shen, X. Chen, H.Q. Wang, H. Xiong, E.G.T. Bosch, I. Lazi ´c, D.L. Cai, W.Z. Qian, S.F. Jin, X. Liu, Y. Han, F. Wei, Nature 592 (2021) 541-544. DOI URL
[22]	V. Kochat, A. Apte, J.A. Hachtel, H. Kumazoe, A. Krishnamoorthy, S. Susarla, J.C. Idrobo, F. Shimojo, P. Vashishta, R. Kalia, A. Nakano, C.S. Tiwary, P.M. Ajayan, Adv. Mater. 29 (2017) 1703754.
[23]	J.D. Zhou, J.H. Lin, X.W. Huang, Y. Zhou, Y. Chen, J. Xia, H. Wang, Y. Xie, H.M. Yu, J.C. Lei, D. Wu, F. Liu, Q.C. Fu, Q.S. Zeng, C.H. Hsu, C.L. Yang, L. Lu, T. Yu, Z.X. Shen, H. Lin, B.I. Yakobson, Q.T. Liu, K. Suenaga, G. Liu, Z. Liu, Nature 556 (2018) 355-359. DOI URL
[24]	P.F. Yang, X.L. Zou, Z.P. Zhang, M. Hong, J.P. Shi, S.L. Chen, J.P. Shu, L.Y. Zhao, S.L. Jiang, X.B. Zhou, Y.H. Huan, C.Y. Xie, P. Gao, Q. Chen, Q. Zhang, Z.F. Liu, Y.F. Zhang, Nat. Commun. 9 (2018) 979. DOI URL
[25]	J.U. Yang, A.R. Mohmad, Y. Wang, R. Fullon, X.J. Song, F. Zhao, I. Bozkurt, M. Au- gustin, E.J.G. Santos, H.S. Shin, W. Zhang, D. Voiry, H.Y. Jeong, M. Chhowalla, Nat. Mater. 18 (2019) 1309-1314. DOI URL
[26]	P. Yang, A.G. Yang, L.X. Chen, J. Chen, Y.W. Zhang, H.M. Wang, L.G. Hu, R.J. Zhang, R. Liu, X.P. Qu, Z.J. Qiu, C.X. Cong, Nano Res 12 (2019) 823-827. DOI URL
[27]	Z.G. Wang, X.Y. Xiong, J.H. Li, M.D. Dong, Mater, Today Phys 16 (2021) 100290.
[28]	B. Chakraborty, A. Bera, D.V.S. Muthu, S. Bhowmick, U.V. Waghmare, A.K. Sood, Phys. Rev. B 85 (2012) 161403. DOI URL
[29]	B.L. Cao, Z.M. Ye, L. Yang, L. Gou, Z.G. Wang, Nanotechnology 32 (2021) 412001. DOI URL
[30]	Y.Y. Hui, X.F. Liu, W.J. Jie, N.Y. Chan, J.H. Hao, Y.T. Hsu, L.J. Li, W. Guo, S.P. Lau, ACS Nano 7 (2013) 7126-7131. DOI URL
[31]	H. Kim, D. Ovchinnikov, D. Deiana, D. Unuchek, A. Kis, Nano Lett 17 (2017) 5056-5063. DOI URL
[32]	The periodic table of the elements. http://www.webelements.com/.
[33]	Z.C. Li, W.N. Shu, Q.Q. Li, W.T. Xu, Z.W. Zhang, J. Li, Y.L. Wang, Y.Y. Liu, J.H. Yang, K.Q. Chen, X.D. Duan, Z.M. Wei, B. Li, Adv. Electron. Mater. 7 (2021) 2001168.
[34]	Z.G. Wang, Q. Li, F. Besenbacher, M.D. Dong, Adv. Mater. 28 (2016) 10224-10229. DOI URL
[35]	J.Q. Huang, Z.Y. Liu, T. Yang, Z.D. Zhang, J. Mater. Sci. Technol. 102 (2022) 132-136. DOI URL
[36]	R. Basori, A.K. Raychaudhuri, Nano-Micro Lett 6 (2014) 63-69. DOI URL
[37]	J. Suh, T.L. Tan, W. Zhao, J. Park, D.Y. Lin, T.E. Park, J. Kim, C. Jin, N. Saigal, S. Ghosh, Z.M. Wong, Y. Chen, F. Wang, W. Walukiewicz, G. Eda, J. Wu, Nat. Commun. 9 (2018) 199. DOI URL
[38]	M.G. Li, J.D. Yao, X.X. Wu, S.C. Zhang, B.R. Xing, X.Y. Niu, X.Y. Yan, Y. Yu, Y.L. Liu, Y.W Wang, ACS Appl. Mater. Interfaces 12 (2020) 6276-6282. DOI URL
[39]	M. Wu, Y.H. Xiao, Y. Zeng, Y.L. Zhou, X.B. Zeng, L.N. Zhang, W.G. Liao, InfoMat 3 (2021) 362-396. DOI URL
[40]	J. Suh, T.E. Park, D.Y. Lin, D.Y. Fu, J. Park, H.J. Jung, Y.B. Chen, C. Ko, C. Jang, Y. Sun, R. Sinclair, J. Chang, S. Tongay, J.Q. Wu, Nano Lett 14 (2014) 6976-6982. DOI URL
[41]	H.H. Fang, W.D. Hu, Adv. Sci. 4 (2017) 1700323.
[42]	T.Y. Wei, X.M. Wang, Q. Yang, Z.H. He, P. Yu, Z. Xie, H.J. Chen, S.W. Li, S.X. Wu, ACS Appl. Mater. Interfaces 13 (2021) 22757-22764. DOI URL
[43]	O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis, Nat. Nanotechnol. 8 (2013) 497-501. DOI PMID
[44]	P. Yu, Q.S. Zeng, C. Zhu, L.J. Zhou, W.N. Zhao, J.C. Tong, Z. Liu, G.W. Yang, Adv. Mater. 33 (2021) 2005607.
[45]	Z.Z. Huang, J.K. Liu, T.F. Zhang, Y.H. Jin, J.P. Wang, S.S. Fan, Q.Q. Li, ACS Appl. Mater. Interfaces 13 (2021) 22796-22805. DOI URL
[46]	S. Kunwar, S. Pandit, J.H. Jeong, J. Lee, Nano-Micro Lett 12 (2020) 91. DOI URL
[47]	R.Q. Cheng, F. Wang, L. Yin, Z.X. Wang, Y. Wen, T.A. Shifa, J. He, Nat. Electron. 1 (2018) 356-361. DOI URL
[48]	L. Tao, Z.F. Chen, Z.Y. Li, J.Q. Wang, X.B. Xu, J.B. Xu, InfoMat 3 (2021) 36-60. DOI URL
[49]	F. Li, R. Tao, B.L. Cao, L. Yang, Z.G. Wang, Adv. Funct. Mater. 31 (2021) 2104367.
[50]	Y.C. Sheng, L.F. Zhang, F. Li, X.Y. Chen, Z.J. Xie, H.Y. Nan, Z.H. Xu, D.W. Zhang, J.H. Chen, Y. Pu, S.Q. Xiao, W.Z. Bao, J. Mater. Sci. Technol. 69 (2021) 15-19. DOI URL
[51]	T.C. Qin, Z.G. Wang, Y.Q. Wang, F. Besenbacher, M. Otyepka, M.D. Dong, Nano-Micro Lett 13 (2021) 183. DOI URL
[52]	N.J. Huo, G. Konstantatos, Nat. Commun. 8 (2017) 572. DOI URL
[53]	F.K. Wang, S.J. Yang, J. Wu, X.Z. Hu, Y. Li, H.Q. Li, X.T. Liu, J.H. Luo, T.Y Zhai, InfoMat 3 (2021) 1251-1271. DOI URL
[54]	Y.X. Deng, Z. Luo, N.J. Conrad, H. Liu, Y.J. Gong, S. Najmaei, P.M. Ajayan, J. Lou, X.F. Xu, P.D. Ye, ACS Nano 8 (2014) 8292-8299. DOI URL
[55]	N.J. Huo, J. Kang, Z.M. Wei, S.S. Li, J.B. Li, S.H. Wei, Adv. Funct. Mater. 24 (2014) 7025-7031. DOI URL
[56]	M.S. Choi, D.S. Qu, D. Lee, X.C. Liu, K. Watanabe, T. Taniguchi, W.J. Yoo, ACS Nano 8 (2014) 9332-9340. DOI PMID
[57]	Q.F. Liu, B. Cook, M.G. Gong, Y.P. Gong, D. Ewing, M. Casper, A. Stramel, J. Wu, ACS Appl. Mater. Interfaces 9 (2017) 12728-12733. DOI URL
[58]	Z.H. Xu, L. Tang, S.W. Zhang, J.Z. Li, B.L. Liu, S.C. Zhao, C.J. Yu, G.D. Wei, Mater. Today Phys. 15 (2020) 100273.
[59]	S. Qiao, R.D. Cong, J.H. Liu, B.L. Liang, G.S. Fu, W. Yu, K.L. Ren, S.F. Wang, C.F. Pan, J. Mater. Chem. C 6 (2018) 3233-3239. DOI URL
[60]	Y.W. Zhang, J. Wang, B. Wang, J.H. Shao, J.N. Deng, C.X. Cong, L.G. Hu, P.F. Tian, R. Liu, S.L. Zhang, Z.J. Qiu, Adv. Optical Mater. 6 (2018) 1800660.

Tune the electronic structure of MoS₂ homojunction for broadband photodetection

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