J Mater Sci Technol ›› 2010, Vol. 26 ›› Issue (1): 93-96.

• Thin Film and Coatings • Previous Articles    

Properties of Gallium Phosphide Thick Films Prepared on Zinc Sul-de Substrates by Radio-Frequency Magnetron Sputtering

Yangping Li, Zhengtang Liu   

  1. School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
  • Received:2008-11-03 Revised:2009-05-13 Online:2010-01-31 Published:2010-01-22
  • Supported by:

    the Aviation Science Foundation of China under grant No. 2008ZE53043

Abstract:

Radio-frequency (RF) magnetron sputtering was employed to prepare gallium phosphide (GaP) thick films on zinc sulfide (ZnS) substrates by sputtering a single crystalline GaP target in an Ar atmosphere. The infrared (IR) transmission properties, structure, morphology, composition and hardness of the film were studied. Results show that both amorphous and zinc-blende crystalline phases existed in the GaP film in almost stoichiometric amounts. The GaP film exhibited good IR transmission properties, though the relatively rough surface and loose microstructure caused a small loss of IR transmission due to scattering. The GaP film also showed a much higher hardness than the ZnS substrate, thereby providing good protection to ZnS.

Key words: Radio-frequency magnetron sputtering, Gallium phosphide, Thick film, Infrared transmission

CLC Number: