n-type Polycrystalline Si Thick Films Deposited on SiNx-coated Metallurgical Grade Si Substrates

doi:10.1016/j.jmst.2014.04.012

J. Mater. Sci. Technol. ›› 2015, Vol. 31 ›› Issue (1): 65-69.DOI: 10.1016/j.jmst.2014.04.012

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n-type Polycrystalline Si Thick Films Deposited on SiN_x-coated Metallurgical Grade Si Substrates

Hongliang Zhang, Liqiang Zhu, Liqiang Guo, Yanghui Liu, Qing Wan^*

Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

Received:2013-11-19 Online:2015-01-20 Published:2015-07-23
Contact: * Corresponding author. Prof.; Tel./Fax: +86 574 86690355; E-mail address: wanqing@nimte.ac.cn (Q. Wan).
Supported by:
This project is supported by the National Natural Science Foundation of China (No. 11104288), the Ningbo Natural Science Foundation (No. 2013A610129) and Zhejiang Province Preferential Post-doctor Funding Project (No. BSH1302050).

Abstract

Abstract: For photovoltaic applications, low-cost SiN_x-coated metallurgical grade silicon (MG-Si) wafers were used as substrates for polycrystalline silicon (poly-Si) thick films deposition at temperatures ranging from 640 to 880 °C by thermal chemical vapor deposition. X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 °C. To obtain n-type poly-Si, the as-deposited poly-Si films were annealed at 880 °C capped with a phosphosilicate glass. Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements. The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 × 10¹⁹ cm^-3 and 68.1 cm² V^-1 s^-1, respectively. High-quality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.

Key words: Thermal chemical vapor deposition, Metallurgical grade Si, Polycrystalline silicon (poly-Si) thick films, Phosphorus diffusion

Hongliang Zhang, Liqiang Zhu, Liqiang Guo, Yanghui Liu, Qing Wan. n-type Polycrystalline Si Thick Films Deposited on SiN_x-coated Metallurgical Grade Si Substrates[J]. J. Mater. Sci. Technol., 2015, 31(1): 65-69.

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n-type Polycrystalline Si Thick Films Deposited on SiN_x-coated Metallurgical Grade Si Substrates

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