J Mater Sci Technol ›› 2007, Vol. 23 ›› Issue (01): 118-122.

• Research Articles • Previous Articles     Next Articles

Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

Li WANG, Xiaobu HU, Xiangang XU, Shouzheng JIANG, Lina NING, Minhua JIANG   

  1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2005-12-06 Revised:2006-04-10 Online:2007-01-28 Published:2009-10-10
  • Contact: Xiangang XU

Abstract: High purity silicon carbide (SiC) powder was synthesized in-situ by chemical reaction between silicon and carbon powder. In order to ensure that the impurity concentration of the resulting SiC powder is suitable for high-resistivity SiC single crystal growth, the preparation technology of SiC powder is different from that of SiC ceramic. The influence of the shape and size of carbon particles on the morphology and phase composition of the obtained SiC powder were discussed. The phase composition and morphology of the products were investigated by X-ray diffraction, Raman microspectroscopy and scanning electron microscopy. The results show that the composition of resulting SiC by in-situ synthesis from Si/C mixture strongly depends on the nature of the carbon source, which corresponds to the particle size and shape, as well as the preparation temperature. In the experimental conditions, flake graphite is more suitable for the synthesis of SiC powder than activated carbon because of its relatively smaller particle size and flake shape, which make the conversion more complete. The major phase composition of the full conversion products is β-SiC, with traces of α-SiC. Glow discharge mass spectroscopy measurements indicated that SiC powder synthesized with this chemical reaction method can meet the purity demand for the growth of high-resistivity SiC single crystals.

Key words: Activated carbon, Flaky graphite, Particle size, SiC powder, High purity