]*>","")" /> Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere

J Mater Sci Technol ›› 1989, Vol. 5 ›› Issue (5): 362-365.

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Oxidation Kinetics of (111) Silicon Monocrystal and Morphology of Oxide Film in Dry Oxygen Atmosphere

LI Wenchao FAN Zishuan SUN Guiru QIN Fu University of Science and Technology of Beijing, China. General Research Institute for Nonferrous Metals, Beijing, China.   

  • Received:1989-09-28 Revised:1989-09-28 Online:1989-09-28 Published:2009-10-10

Key words: oxidation mechanism, silicon monocrystal, oxide film morphology