Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

doi:10.1016/j.jmst.2024.06.058

Abstract

Abstract: To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS₂/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (i.e., both electrical and optical pulses simultaneously) as well as single stimuli (i.e., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZr_xTi_1-_xO₃ (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS₂. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95 % pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.

Key words: Molybdenum disulfide, Lead zirconate titanate, Ferroelectric field-effect transistor, Optoelectronic artificial synapse, Neuromorphic computing

Woochan Chung, Doohyung Kim, Juri Kim, Jongmin Park, Sungjun Kim, Sejoon Lee. Optically and electrically modulated artificial synapses based on MoS₂/PZT ferroelectric field-effect transistor for neuromorphic computing system[J]. J. Mater. Sci. Technol., 2025, 218: 25-34.

References

[1] C.K. Machens, Science 338 (2012) 1156-1157.
[2] H.S.P. Wong, S. Salahuddin, Nat. Nanotechnol. 10 (2015) 191-194.
[3] Y. Van De Burgt, E.Lubberman, E.J. Fuller, S.T. Keene, G.C. Faria, S. Agarwal, M.J. Marinella, A. Alec Talin, A. Salleo, Nat. Mater. 16 (2017) 414-418.
[4] F. Zhou, Y. Liu, X. Shen, M. Wang, F. Yuan, Y. Chai, Adv. Funct. Mater. 28 (2018) 1800080.
[5] Z. Cheng, C. Ríos, W.H. Pernice, C.D. Wright, H. Bhaskaran, Sci. Adv. 3 (2017) e1700160.
[6] P. Cappelletti, in: 2015 IEEE International Electron Devices Meeting, IEEE, Washington, DC, 2015, pp. 241-244.
[7] I. Chakraborty, A. Jaiswal, A. Saha, S. Gupta, K. Roy, Appl. Phys. Rev. 7 (2020) 021308.
[8] L. Xu, Z. Duan, P. Zhang, X. Wang, J. Zhang, L. Shang, K. Jiang, Y. Li, L. Zhu, Y. Gong, ACS Appl. Mater. Interfaces 12 (2020) 44902-44911.
[9] A. Lipatov, T. Li, N.S. Vorobeva, A. Sinitskii, A. Gruverman, Nano Lett. 19 (2019) 3194-3198.
[10] Q. Zhang, H. Xiong, Q. Wang, L. Xu, M. Deng, J. Zhang, D. Fuchs, W. Li, L. Shang, Y. Li, Adv. Electron. Mater. 8 (2022) 2101189.
[11] M. Yan, Q. Zhu, S. Wang, Y. Ren, G. Feng, L. Liu, H. Peng, Y. He, J. Wang, P. Zhou, Adv. Electron. Mater. 7 (2021) 2001276.
[12] P.-C. Shen, C. Lin, H. Wang, K.H. Teo, J. Kong, Appl. Phys. Lett. 116 (2020).
[13] L. Chen, L. Wang, Y. Peng, X. Feng, S. Sarkar, S. Li, B. Li, L. Liu, K. Han, X. Gong, Adv. Electron. Mater. 6 (2020) 2000057.
[14] S. Lee, Y. Lee, Carbon 126 (2018) 176-182.
[15] E.B. Song, B. Lian, S.M. Kim, S. Lee, T.-K. Chung, M.Wang, C. Zeng, G. Xu, K. Wong, Y. Zhou, H.I. Rasool, D.H. Seo, H.-J. Chung, J. Heo, S. Seo, K.L. Wang, Appl. Phys. Lett. 99 (2011) 042109.
[16] Z.-D. Luo, X. Xia, M.-M. Yang, N.R. Wilson, A. Gruverman, M. Alexe, ACS Nano 14 (2020) 746-754.
[17] Y. Jiang, L. Zhang, R. Wang, H. Li, L. Li, S. Zhang, X. Li, J. Su, X. Song, C. Xia, ACS Nano 16 (2022) 11218-11226.
[18] J. Du, D. Xie, Q. Zhang, H. Zhong, F. Meng, X. Fu, Q. Sun, H. Ni, T. Li, E.-J. Guo, Nano Energy 89 (2021) 106439.
[19] R. Ganatra, Q. Zhang, ACS Nano 8 (2014) 4074-4099.
[20] O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, A. Kis, Nat. Nanotechnol. 8 (2013) 497-501.
[21] K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Phys. Rev. Lett. 105 (2010) 136805.
[22] E. Preciado, F.J. Schülein, A.E. Nguyen, D. Barroso, M. Isarraraz, G. Von Son, I.-H. Lu, W.Michailow, B. Möller, V. Klee, Nat. Commun. 6 (2015) 8593.
[23] A. Di Bartolomeo, L. Genovese, T. Foller, F. Giubileo, G. Luongo, L. Croin, S.-J. Liang, L.K. Ang, M. Schleberger, Nanotechnology 28 (2017) 214002.
[24] W. Zhang, J.K. Huang, C.H. Chen, Y.H. Chang, Y.J. Cheng, L.J. Li, Adv. Mater. 25 (2013) 3456-3461.
[25] A.P. Herman, S.J. Zelewski, K. Misztal, R. Kudrawiec, Nanophotonics 11 (2022) 1335-1344.
[26] J. Lee, S. Pak, Y.-W. Lee, Y.Cho, J. Hong, P. Giraud, H.S. Shin, S.M. Morris, J.I. Sohn, S. Cha, Nat. Commun. 8 (2017) 14734.
[27] S.-G. Kim, S.-H. Kim, J. Park, G.-S. Kim, J.-H. Park, K.C. Saraswat, J. Kim, H.-Y. Yu, ACS Nano 13 (2019) 10294-10300.
[28] B. Huang, N. Li, Q. Wang, C. Ouyang, C. He, L. Zhang, L. Du, W. Yang, R. Yang, D. Shi, Adv. Mater. Interfaces 9 (2022) 2201558.
[29] M.C. Sahu, S. Sahoo, S.K. Mallik, A.K. Jena, S. Sahoo, Adv. Mater. Technol. 8 (2023) 2201125.
[30] J. Agar, A. Damodaran, M. Okatan, J. Kacher, C. Gammer, R. Vasudevan, S. Pandya, L. Dedon, R. Mangalam, G. Velarde, Nat. Mater. 15 (2016) 549-556.
[31] J.W. Lee, C.S. Park, M. Kim, H.E. Kim, J. Am. Ceram.Soc. 90 (2007) 1077-1080.
[32] S. Samanta, V. Sankaranarayanan, K. Sethupathi, Vacuum 156 (2018) 456-462.
[33] M. Ye, D. Winslow, D. Zhang, R. Pandey, Y.K. Yap, Photonics 2 (2015) 288-307.
[34] H. Li, Q. Zhang, C.C.R. Yap, B.K. Tay, T.H.T. Edwin, A. Olivier, D. Baillargeat, Adv. Funct. Mater. 22 (2012) 1385-1390.
[35] C. Lee, H. Yan, L.E. Brus, T.F. Heinz, J. Hone, S. Ryu, ACS Nano 4 (2010) 2695-2700.
[36] C. Gattinoni, N. Strkalj, R. Härdi, M. Fiebig, M. Trassin, N.A. Spaldin, Proc. Natl. Acad. Sci. U.S.A. 117 (2020) 28589-28595.
[37] S.O. Chung, J.W. Kim, S.T. Kim, G.H. Kim, W.J. Lee, Mater. Chem. Phys. 53 (1998) 60-66.
[38] D.R. Lide, CRC Handbook of Chemistry and Physics, 89th Ed, CRC Press, 2008.
[39] A.E.-r. Mahmoud, S. Parashar, Mater. Sci. Eng. B 246 (2019) 13-20.
[40] H. Yan, F. Inam, G. Viola, H. Ning, H. Zhang, Q. Jiang, T. Zeng, Z. Gao, M.J. Reece, J. Adv. Dielectr. 1 (2011) 107-118.
[41] P. Zhao, A. Padovani, P. Bolshakov, A. Khosravi, L. Larcher, P.K. Hurley, C.L. Hin-kle, R.M. Wallace, C.D. Young, ACS Appl. Electron. Mater. 1 (2019) 1372-1377.
[42] W. Lee, O. Kahya, C.T. Toh, B. Özyilmaz, J.-H. Ahn, Nanotechnology 24 (2013) 475202.
[43] B. Ahn, Y. Kim, M. Kim, H.M. Yu, J. Ahn, E. Sim, H. Ji, H.Z. Gul, K.S. Kim, K. Ihm, H. Lee, E.K. Kim, S.C. Lim, Nano Lett. 23 (2023) 7927-7933.
[44] H. Jeon, S.-G. Kim, J. Park, S.-H. Kim, E. Park, J. Kim, H.-Y. Yu, Small 16 (2020) 2004371.
[45] M.Y. Chan, K. Komatsu, S.-L. Li, Y. Xu, P. Darmawan, H. Kuramochi, S. Nakaharai, A. Aparecido-Ferreira, K. Watanabe, T. Taniguchi, K. Tsukagoshi, Nanoscale 5 (2013) 9572-9576.
[46] X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R.D. Piner, L. Colombo, R.S. Ruoff, Nano Lett. 9 (2009) 4359-4363.
[47] X. Wang, C. Zhu, Y. Deng, R. Duan, J. Chen, Q. Zeng, J. Zhou, Q. Fu, L. You, S. Liu, Nat. Commun. 12 (2021) 1109.
[48] Z.-D. Luo, S. Zhang, Y. Liu, D. Zhang, X. Gan, J. Seidel, Y. Liu, G. Han, M. Alexe, Y. Hao, ACS Nano 16 (2022) 3362-3372.
[49] A.G. Milnes, D.L. Feucht, Heterojunctions and Metal-Semiconductor Junctions, Academic Press, New York, 1972.
[50] D.K. Schroder, New York, 1998.
[51] S. Seo, B.-S. Kang, J.-J. Lee, H.-J. Ryu, S. Kim, H. Kim, S. Oh, J. Shim, K. Heo, S. Oh, Nat. Commun. 11 (2020) 3936.
[52] P.Y. Chen, X. Peng, S. Yu, In: 2017 IEEE International Electron Devices Meeting, San Francisco, CA, 2017, pp. 135-138.
[53] H. Wang, C. Zhang, F. Rana, Nano Lett. 15 (2015) 8204-8210.
[54] J. Hong, Z. Hu, M. Probert, K. Li, D. Lv, X. Yang, L. Gu, N. Mao, Q. Feng, L. Xie, Nat. Commun. 6 (2015) 6293.
[55] M.R. Morris, S.R. Pendlebury, J. Hong, S. Dunn, J.R. Durrant, Adv. Mater. 28 (2016) 7123-7128.
[56] J. Gao, X. Lian, Z. Chen, S. Shi, E. Li, Y. Wang, T. Jin, H. Chen, L. Liu, J. Chen, Y. Zhu, W. Chen, Adv. Funct. Mater. 32 (2022) 2110415.
[57] X.W. Zhang, D. Xie, J.L. Xu, Y.L. Sun, X. Li, C. Zhang, R.X. Dai, Y.F. Zhao, X.M. Li, X. Li, H.W. Zhu, IEEE Electron Device Lett. 36 (2015) 784-786.
[58] Y. Sun, D. Xie, X. Zhang, J. Xu, X. Li, X. Li, R. Dai, X. Li, P. Li, X. Gao, H. Zhu, Nanotechnology 28 (2017) 045204.
[59] K.L. Ganapathi, M. Rath, M.S.R. Rao, Semicond. Sci. Technol. 34 (2019) 055016.
[60] A. Lipatov, P. Sharma, A. Gruverman, A. Sinitskii, ACS Nano 9 (2015) 8089-8098.
[61] A. Lipatov, N.S. Vorobeva, T. Li, A. Gruverman, A. Sinitskii, Adv. Electron. Mater. 7 (2021) 2001223 .

Optically and electrically modulated artificial synapses based on MoS₂/PZT ferroelectric field-effect transistor for neuromorphic computing system

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 9

Recommended Articles

Metrics

Comments

[1]	Haider Abbas, Jiayi Li, Asif Ali, Sajjad Hussain, Jongwan Jung, Diing Shenp Ang. Emulation of short-term and long-term synaptic plasticity with high uniformity in chalcogenide-based diffusive memristor device for neuromorphic applications [J]. J. Mater. Sci. Technol., 2025, 216(0): 99-107.
[2]	Jian Yiing Loh, Feng Ming Yap, Wee-Jun Ong. 2D/2D heterojunction interface: Engineering of 1T/2H MoS₂ coupled with Ti₃ C₂ T_x heterostructured electrocatalysts for pH-universal hydrogen evolution [J]. J. Mater. Sci. Technol., 2024, 179(0): 86-97.
[3]	Y.B. Liu, D. Cai, T.C. Zhao, M. Shen, X. Zhou, Z.H. Zhang, X.W. Meng, D.E. Gu. Monolayer MoS₂ synaptic devices synergistically modulated by Na⁺ ions and sulfur vacancies for neuromorphic computing and pain perception stimulation [J]. J. Mater. Sci. Technol., 2023, 163(0): 121-131.
[4]	Suya Sun, Xiaolin Zhu, Xingjiang Wu, Meigui Xu, Ying Hu, Ningzhong Bao, Guan Wu. Covalent-architected molybdenum disulfide arrays on Ti₃C₂T_x MXene fiber towards robust capacitive energy storage [J]. J. Mater. Sci. Technol., 2023, 139(0): 23-30.
[5]	Min-Kyu Song, Hojung Lee, Jeong Hyun Yoon, Young-Woong Song, Seok Daniel Namgung, Taehoon Sung, Yoon-Sik Lee, Jong-Seok Lee, Ki Tae Nam, Jang-Yeon Kwon. Humidity-induced synaptic plasticity of ZnO artificial synapses using peptide insulator for neuromorphic computing [J]. J. Mater. Sci. Technol., 2022, 119(0): 150-155.
[6]	Rui Tao, Xianlin Qu, Zegao Wang, Fang Li, Lei Yang, Jiheng Li, Dan Wang, Kun Zheng, Mingdong Dong. Tune the electronic structure of MoS₂ homojunction for broadband photodetection [J]. J. Mater. Sci. Technol., 2022, 119(0): 61-68.
[7]	Wang Yaning, Li Wanying, Guo Yimeng, Huang Xin, Luo Zhaoping, Wu Shuhao, Wang Hai, Chen Jiezhi, Li Xiuyan, Zhan Xuepeng, Wang Hanwen. A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction [J]. J. Mater. Sci. Technol., 2022, 128(0): 239-244.
[8]	Haiyang Yu, Zhenzhu Wang, Jiangfeng Ni, Liang Li. Freestanding nanosheets of 1T-2H hybrid MoS₂ as electrodes for efficient sodium storage [J]. J. Mater. Sci. Technol., 2021, 67(0): 237-242.
[9]	Jihui WANG, Yang XIA, E.Wieers, L.M.Stals, X.Zhang, J.P.Celis. Influence of Deposition Conditions on the Crystal Structure of MoS2 Coating [J]. J Mater Sci Technol, 2006, 22(03): 324-328.