J. Mater. Sci. Technol. ›› 2024, Vol. 201: 236-249.DOI: 10.1016/j.jmst.2024.02.036

• Research Article • Previous Articles     Next Articles

Understanding the formation mechanism of SiC/Al joints by U-TLP bonding with the inactive Zn interlayer

Di Zhao, Chenchen Zhao, Ziyang Xiu*, Jiuchun Yan*   

  1. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150 0 01, China
  • Received:2023-10-24 Revised:2024-01-06 Accepted:2024-02-02 Published:2024-12-01 Online:2024-03-26
  • Contact: * E-mail addresses: xiuzy@hit.edu.cn (Z. Xiu), jcyan@hit.edu.cn (J. Yan) .

Abstract: The ultrasonic-assisted transient liquid phase (U-TLP) bonding process is extremely fast, which is a great challenge to reveal the inherent mechanisms. Understanding the joint formation mechanism of U-TLP is essential for the joining process design. In this study, the SiC ceramics and 6063Al alloys were joined by U-TLP using a Zn interlayer. The process of removing the oxide film on the base metal involved cracking, flaking off, suspending, and fragmenting. The migration of the eutectic liquid phases frontier was very fast (within 1 s). The relationship between the thickness of the liquid layer and the ultrasonic action time was a power function. The typical microstructure of the SiC/6063Al joints was SiC/amorphous Al2O3/Zn-Al eutectic/ Zn-Al eutectoid/6063Al. The shear strength of SiC/6063Al joints increased with the interfacial bonding ratio and reached up to 27 MPa for the ultrasonic action time of 5 s. The metallurgical bonding at the SiC/bond metal interface was formed through the amorphous Al2O3 transition layer. The formation mechanism of the Al2O3 reaction layer was revealed based on the thermodynamics, kinetics, and acoustics cavitation theory. This will provide a guideline for the future U-TLP process design.

Key words: SiC ceramic, U-TLP, Interfacial reaction, Acoustics cavitation, Thermodynamics