[1 ] X.H. Wang, B. Yao, Z.Z. Zhang, B.H. Li, Z.P. Wei, D.Z. Shen, Y.M. Lu, and X.W. Fan: Semicond. Sci. Technol., 2006, 21, 494.
[2 ] Y.R. Ryu, S. Zhu, D.C. Look, J.M. Wrobel, H.M. Jeong and H.W. White: J. Cryst. Growth, 2000, 216, 330.
[3 ] Y. Yoshino, T. Makino, Y. Katayama and T. Hata: Vacuum, 2000, 59, 538.
[4 ] J.B. Lee, H.J. Lee, S.H. Seo and J.S. Park: Thin Solid Films, 2000, 398-399, 641.
[5 ] C.H. Park, S.B. Zhang and S.H. Wei: Phys. Rev. B, 2002, 66, 073202.
[6 ] C. Gonales, D. Block, R.T. Cox and A. Herve: J. Cryst. Growth, 1982, 59, 375.
[7 ] D. Block, A. Herve and R.T. Cox: Phys. Rev. B, 1982, 25, 6049.
[8 ] A. Onodera, N. Tamaki, Y. Kawamura and I.N. Sakagami: Jpn. J. Appl. Phys., 1996, 35, 5160.
[9 ] M.G. Wardle, J.P. Goss and P.R. Bridon: Phys. Rev. B, 2005, 71, 155205.
[10] T.R.N. Kutty and S. Ezhilvalavan: Jpn. J. Appl. Phys., 1995, 34, 6125.
[11] S. Ezhilvalavan and T.R.N. Kutty: J. Mater. Sci. Mater. Electron., 1997, 7, 37.
[12] S. Ezhilvalavan and T.R.N. Kutty: J. Phys. D- Appl. Phys., 1996, 29, 809.
[13] M.C.S. Norberga and W.A.Mannheimer: J. Am. Cearm. Soc., 1996, 79(6), 1504.
[14] G.W. Bak and M. Kryszewski: Proc. SPIE, 1997, 3181, 2.
[15] J.F. Cordaro, Y. Shin and J.E. May: J. Appl. Phys., 1986, 60(12), 4186.
[16] J.D. Levine: CRC Crit. Rev. Solid State Sei., 1975, 5, 597.
[17] M. Rossinelli, G. Blatter and F. Greuter: Electrical Ceramics, ed. B.C.H. Steele, British Ceramic Society, Stoke-on-Trent, 1985, 1.
[18] S. Ezhilvalavan and T.R.N. Kutty: IETE J. Res., 1997, 43, 233. |