Hole-pinned defect-dipoles induced colossal permittivity in Bi doped SrTiO3 ceramics with Sr deficiency

doi:10.1016/j.jmst.2019.11.012

Abstract

Abstract:

Bi doped SrTiO₃ ceramics with Sr deficiency, i.e. Sr_1-1.5_xBi_xTiO₃ (x=0, 0.01, 0.05, 0.1), were prepared via conventional solid-state reaction route. A colossal permittivity (CP) over 10⁴ with low dielectric loss less than 0.05 was obtained in x=0.05 Sr_1-1.5_xBi_xTiO₃ ceramics. In addition, the dielectric constant is maintained at a value greater than 10⁴ in the range of 10²-10⁵ Hz and almost frequency independent. Phase structure analysis and density functional theory calculations suggest that the Bi_Sr^· - V_Sr^" - Bi_Sr^· defect complex with hole-pinned defect-dipoles maybe responsible for the high-performance CP properties. This work gives a new way to achieve high performance CP materials in ABO₃ perovskite ceramics.

Key words: Bi doped SrTiO₃, Sr deficiency, Colossal permittivity, Low dielectric loss

Yulong Qiao, Weili Li, Yulei Zhang, Lu Jing, Chang Gao, Wenping Cao, Dan Xu, Weidong Fei. Hole-pinned defect-dipoles induced colossal permittivity in Bi doped SrTiO₃ ceramics with Sr deficiency[J]. J. Mater. Sci. Technol., 2020, 44: 54-61.

Figures/Tables 10

Fig. 1. Frequency dependent dielectric properties. (a) Frequency dependent dielectric constant of Bi doped and undoped STO ceramics. (b) Frequency dependent dielectric loss of Bi doped and undoped STO ceramics.

Fig. 2. Temperature dependent dielectric constant of Bi doped STO ceramics. (a) Temperature dependent dielectric constant of undoped STO. (b) Temperature dependent dielectric constant of x = 1% sample. (c) Temperature dependent dielectric constant of x = 5% sample. (d) Temperature dependent dielectric constant of x = 10% sample.

Fig. 3. Temperature dependent dielectric loss of Bi doped STO ceramics. (a) Temperature dependent dielectric loss of undoped STO. (b) Temperature dependent dielectric loss of x = 1% sample. (c) Temperature dependent dielectric loss of x = 5% sample. (d) Temperature dependent dielectric loss of x = 10% sample.

Fig. 4. Surface morphology of Bi doped STO ceramics with different x. (a) x = 0%; (b) x = 1%; (c) x = 5%; (d): x = 10%.

Fig. 5. Complex impedance plots of BixSr1-1.5xTiO3 ceramics with different x. (a) x = 0%; (b) x = 1%; (c) x = 5%; (d) x = 10%.

Fig. 6. (a) Frequency dependent dielectric constant of x = 5% BixSr1-1.5xTiO3 ceramics with Ag, Al and Cu electrodes. (b) Complex impedance plots of x = 5% BixSr1-1.5xTiO3 ceramics with different electrodes. (c) Leakage current result of pure STO and x = 5% BixSr1-1.5xTiO3 ceramics.

Fig. 7. XRD patterns of Bi doped STO ceramics. (a) The XRD patterns of Bi doped STO ceramics. (b) The fine scan XRD patterns of (110), (111), (200) peaks. (c)-(e) The change of 2θ(200)-2θ(110), 2θ(200)-2θ(111) and 2θ(111)-2θ(110) with increased x%.

Fig. 8. Different ion position of BiSr· - VSr" defect complex in STO 3 × 3 × 3 supercells (001) plane.

Fig. 9. (a) Lattice parameters of different BiSr· - VSr" defect complex configurations. (b) Schematic diagram of BiSr· - VSr" - BiSr· defect complex at (001) plane. The diagram at the bottom explains the lattice distortion in BixSr1-1.5xTiO3.

Table 1 Lattice parameters and volume of different supercells.

Configuration	a (?)	b (?)	c (?)	Volume (?³)
STO	11.8092	11.8092	11.8092	1647.81
1	12.0512	11.7774	11.7549	1668.40
2	11.8071	12.0051	11.7495	1665.41
3	11.9006	11.9016	11.7490	1664.02
4	11.8027	11.8186	11.8185	1648.57

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Hole-pinned defect-dipoles induced colossal permittivity in Bi doped SrTiO₃ ceramics with Sr deficiency

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