Solution-processed, flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot heterostructures

doi:10.1016/j.jmst.2020.06.047

Abstract

Abstract:

Due to their promising applications in foldable displays, optical communication equipment and environmental monitoring systems, flexible and broadband optoelectronic devices have gained extensive attention in recent years. Here, a flexible and broadband photodetector based on CsPbBr₃/PbSe quantum dot (QD) heterostructures is firstly presented. The integrated QD heterostructures possess consecutive detection range from ultraviolet (UV) to long-wavelength infrared (LW-IR) regions with efficient light absorption and chemical stability, in comparison with the pristine PbSe QDs. Systematic material characterizations reveal the improved exciton dissociation, carrier transport and carrier lifetime of the QD heterostructures. Flexible photodetector Ag/CsPbBr₃/PbSe/Ag demonstrate a high responsivity of 7.17 A/W with a specific detectivity of 8.97 × 10¹² Jones under 25 μW/cm² 365 nm illumination at 5 V. Furthermore, it could maintain 91.2 % (or 94.9 %) of its initial performance even after bending for thousands of times (or exposing in ambient air for 4 weeks). More importantly, its response time is shortened more than three orders of magnitude as that of pristine PbSe QDs-based photodetectors. Therefore, it provides a feasible and promising method for the next-generation high-performance broadband photodetectors via constructing heterostructures of various QDs.

Key words: Quantum dots, Broadband detection, Flexible photodetectors, Fast photoresponse speed, Heterostructures

Jinming Hu, Shengyi Yang, Zhenheng Zhang, Hailong Li, Chandrasekar Perumal Veeramalai, Muhammad Sulaman, Muhammad Imran Saleem, Yi Tang, Yurong Jiang, Libin Tang, Bingsuo Zou. Solution-processed, flexible and broadband photodetector based on CsPbBr₃/PbSe quantum dot heterostructures[J]. J. Mater. Sci. Technol., 2021, 68: 216-226.

Figures/Tables 11

Fig. 1. Schematic diagrams of (a) processing procedures and (b) device configuration for flexible and broadband PD based on CsPbBr3/PbSe heterostructures.

Fig. 2. SEM images of the as-prepared QD films with low (a, b) and high (c, d) magnifications.

Fig. 3. Structure and elemental composition of the QD films. (a) XRD pattern of PbSe QDs; (b) XRD pattern of CsPbBr3 QDs; (c) EDS spectrum of PbSe QD film; (d) EDS spectrum of CsPbBr3 QD film.

Fig. 4. Optical properties and morphologies of the synthesized QDs. (a) Absorption spectrum of PbSe QDs. (b) Absorption and PL spectra of CsPbBr3 QDs. (c) Absorption spectra of CsPbBr3/PbSe, pristine PbSe and CsPbBr3 films. (d) TEM image of PbSe QDs. The inset shows the histogram for their average diameter. (e) TEM image of CsPbBr3 QDs. The inset depicts the histogram for their average diameter.

Fig. 5. Comparsion of optoelectronic properties for different PDs. (a) Responsivity and (b) detectivity for different PDs under different wavelength illumination. (c) I-t curves of different PDs under 365 nm illumination. All the measurements were performed at 5 V under 62.8 μW cm-2 illumination.

Table 1 Device performance of PDs with different active materials (@62.8 μW cm-2 365 nm illumination at 5 V).

Active materials	Responsivity (A/W)	Specific detectivity (Jones)	Rising/decaying time (ms)
CsPbBr₃	6.98	8.710 × 10¹²	1.54/1.63
PbSe	3.56	4.432 × 10¹²	558/565
CsPbBr₃/PbSe	6.26	7.794 × 10¹²	0.5/0.78

Fig. 6. (a) Steady PL spectra of the pristine CsPbBr3 and CsPbBr3/PbSe films; (b) time-resolved PL decay spectra of the pristine CsPbBr3 and CsPbBr3/PbSe films at λ = 520 nm; (c) band diagram of the CsPbBr3/PbSe heterostructures before and after contacting.

Fig. 7. Typical I-V curves of the CsPbBr3/PbSe heterostructures based PD. I-V characteristics of the PD under 365 nm (a), 520 nm (c), 980 nm (e) and 1550 nm (g) illumination with different light intensities. Iph and R of the PD under 365 nm (b), 520 nm (d), 980 nm (f) and 1550 nm (h) illumination as the function of light intensity.

Fig. 8. Specific detectivity of the CsPbBr3/PbSe heterostructures based PD under different wavelength illumination at 5 V.

Table 2 Performance of broadband PDs based on PbS or PbSe CQDs.

Active materials	Detection wavelength range (nm)	R (A/W)	D* (Jones)	Rising/decaying time (ms)	Light intensity (mW/cm²)/wavelength (nm)/bias (V)/substrate	Refs.
PbS/ZnO NWs	300-1000	0.051	3.4 × 10⁸	9000/2000	7.02/300/10/rigid	[46]
PbS/P3HT NWs	365-850	—	2.1 × 10¹¹	160/120	0.018/625/—/rigid	[47]
PbS/ZnO NPs	375-1064	4.54	3.98 × 10¹²	1010/1350	0.0112/375/5/flexible	[43]
Bilayer PbS	white light	∼0.3	1.71 × 10¹²	3.63/29.56	0.0106/580/10/rigid	[48]
Bilayer PbS	500-910	444	4.52 × 10¹³	25.5/25.6	0.00019/500/1/rigid	[49]
PbSe/TiO₂/graphene	350-1064	0.506	3 × 10¹³	0.75/0.75	0.0425/350/1/rigid	[50]
PNDIT-F3N/Bilayer PbSe	350-2500	>1	>10¹²	0.14/0.41	0.1/visible/1/rigid	[51]
PbSe/CsPbBr₃ CQDs	365-1550	7.17	8.97 × 10¹²	0.5/0.78	0.025/365/5/flexible	This work

Fig. 9. (a) The currents of the flexible device in various radii under different wavelength illumination; (b) I-t curves of the device with different bending-recovering cycles under 365 nm illumination; (c) Photoresponse of the device under 365 nm illumination before and after storage in ambient air for 4 weeks. All the measurements were performed at 5 V and the intensity of the incident light was maintained at 62.8 μW/cm2.

References 52

[1]	W. Wang, F. Zhang, M. Du, L. Li, M. Zhang, K. Wang, Y. Wang, B. Hu, Y. Fang, J. Huang, Nano Lett., 17 (2017), pp. 1995-2002. DOI URL
[2]	X. Hu, X. Zhang, L. Liang, J. Bao, S. Li, W. Yang, Y. Xie, Adv. Funct. Mater., 24 (2014), pp. 7373-7380. DOI URL
[3]	T. Gao, Q. Zhang, J. Chen, X. Xiong, T. Zhai, Adv. Opt. Mater., 5 (2017), 1700206. DOI URL
[4]	W. Wang, F. Zhang, H. Bai, L. Li, M. Gao, M. Zhang, X. Zhan, Nanoscale, 8 (2016), pp. 5578-5586. DOI URL
[5]	D. Han, M. Imran, M. Zhang, S. Chang, X.G. Wu, X. Zhang, J. Tang, M. Wang, S. Ali, X. Li, G. Yu, J. Han, L. Wang, B. Zou, H. Zhong, ACS Nano, 12 (2018), pp. 8808-8816. DOI URL
[6]	Y. Shynkarenko, M.I. Bodnarchuk, C. Bernasconi, Y. Berezovska, V. Verteletskyi, S.T. Ochsenbein, M.V. Kovalenko, ACS Energy Lett., 4 (2019), pp. 2703-2711. DOI PMID
[7]	B. Sun, O. Ouellette, F.P. García de Arquer, O. Voznyy, Y. Kim, M. Wei, A.H. Proppe, M.I. Saidaminov, J. Xu, M. Liu, P. Li, J.Z. Fan, J.W. Jo, H. Tan, F. Tan, S. Hoogland, Z.H. Lu, S.O. Kelley, E.H. Sargent, Nat. Commun., 9 (2018), p. 4003. DOI URL
[8]	M.I. Saidaminov, J. Kim, A. Jain, R. Quintero-Bermudez, H. Tan, G. Long, F. Tan, A. Johnston, Y. Zhao, O. Voznyy, E.H. Sargent, Nat. Energy, 3 (2018), pp. 648-654. DOI URL
[9]	K. Shen, X. Li, H. Xu, M. Wang, X. Dai, J. Guo, T. Zhang, S. Li, G. Zou, K.L. Choy, I.P. Parkin, Z. Guo, H. Liu, J. Wu, J. Mater. Chem. A, 7 (2019), pp. 6134-6142. DOI PMID
[10]	C. Bi, S.V. Kershaw, A.L. Rogach, J. Tian, Adv. Funct. Mater., 29 (2019), 1902446.
[11]	Y. Wang, Z. Liu, N. Huo, F. Li, M. Gu, X. Ling, Y. Zhang, K. Lu, L. Han, H. Fang, A.G. Shulga, Y. Xue, S. Zhou, F. Yang, X. Tang, J. Zheng, M.A. Loi, G. Konstantatos, W. Ma, Nat. Commun., 10 (2019), p. 5136. DOI URL
[12]	R. Saran, R.J. Curry, Nat. Photonics, 10 (2016), pp. 81-92. DOI URL
[13]	X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, Z. Fan, Nat. Commun., 5 (2014), p. 4007. DOI PMID
[14]	M.A. Hines, G.D. Scholes, Adv. Mater., 15 (2003), pp. 1844-1849. DOI URL
[15]	Z. Yang, M. Wang, Y. Shi, X. Song, Z. Lin, Z. Ren, J. Bai, J. Mater. Chem., 22 (2012), pp. 21009-21016. DOI URL
[16]	W.W. Yu, J.C. Falkner, B.S. Shih, V.L. Colvin, Chem. Mater., 16 (2004), pp. 3318-3322.
[17]	C. Fu, H. Wang, T. Song, L. Zhang, W. Li, B. He, M. Sulaman, S. Yang, B. Zou, Nanotechnology, 27 (2016), 065201. DOI URL
[18]	Y. Tong, E. Bladt, M.F. Ayguler, A. Manzi, K.Z. Milowska, V.A. Hintermayr, P. Docampo, S. Bals, A.S. Urban, L. Polavarapu, J. Feldmann, Angew. Chem. Int. Ed., 55 (2016), pp. 13887-13892. DOI URL
[19]	J. Li, L. Xu, T. Wang, J. Song, J. Chen, J. Xue, Y. Dong, B. Cai, Q. Shan, B. Han, H. Zeng, Adv. Mater., 29 (2017), 1603885. DOI URL
[20]	A. Swarnkar, A.R. Marshall, E.M. Sanehira, B.D. Chernomordik, D.T. Moore, J.A. Christians, T. Chakrabarti, J.M. Luther, Science, 354 (2016), pp. 92-95. DOI URL
[21]	R.W. Crisp, D.M. Kroupa, A.R. Marshall, E.M. Miller, J. Zhang, M.C. Beard, J.M. Luther, Sci. Rep., 5 (2015), p. 9945. DOI URL
[22]	J. Tang, K.W. Kemp, S. Hoogland, K.S. Jeong, H. Liu, L. Levina, M. Furukawa, X. Wang, R. Debnath, D. Cha, K.W. Chou, A. Fischer, A. Amassian, J.B. Asbury, E.H. Sargent, Nat. Mater., 10 (2011), pp. 765-771. DOI URL
[23]	A.H. Ip, S.M. Thon, S. Hoogland, O. Voznyy, D. Zhitomirsky, R. Debnath, L. Levina, L.R. Rollny, G.H. Carey, A. Fischer, K.W. Kemp, I.J. Kramer, Z. Ning, A.J. Labelle, K.W. Chou, A. Amassian, E.H. Sargent, Nat. Nanotechnol., 7 (2012), pp. 577-582. DOI URL
[24]	X. Lan, O. Voznyy, A. Kiani, F.P.G. de Arquer, A.S. Abbas, G.H. Kim, M. Liu, Z. Yang, G. Walters, J. Xu, M. Yuan, Z. Ning, F. Fan, P. Kanjanaboos, I. Kramer, D. Zhitomirsky, P. Lee, A. Perelgut, S. Hoogland, E.H. Sargent, Adv. Mater., 28 (2016), pp. 299-304. DOI URL
[25]	H. Wang, Y. Wang, B. He, W. Li, M. Sulaman, J. Xu, S. Yang, Y. Tang, B. Zou, ACS Appl. Mater. Interfaces, 8 (2016), pp. 18526-18533. DOI URL
[26]	E.M. Sanehira, A.R. Marshall, J.A. Christians, S.P. Harvey, P.N. Ciesielski, L.M. Wheeler, P. Schulz, L.Y. Lin, M.C. Beard, J.M. Luther, Sci. Adv., 3 (2017), p. eaao4204.
[27]	S.-M. Lee, W. Li, P. Dhar, S. Malyk, Y. Wang, W. Lee, A. Benderskii, J. Yoon, Adv. Energy Mater., 5 (2015), 1500761. DOI URL
[28]	X. Li, Y. Wu, S. Zhang, B. Cai, Y. Gu, J. Song, H. Zeng, Adv. Funct. Mater., 26 (2016), pp. 2435-2445. DOI URL
[29]	D. Yang, X. Li, W. Zhou, S. Zhang, C. Meng, Y. Wu, Y. Wang, H. Zeng, Adv. Mater., 31 (2019), 1900767.
[30]	Y. Tong, E.P. Yao, A. Manzi, E. Bladt, K. Wang, M. Döblinger, S. Bals, P. Müller-Buschbaum, A.S. Urban, L. Polavarapu, J. Feldmann, Adv. Mater., 30 (2018), 1801117. DOI URL
[31]	Y.S. Rim, S.H. Bae, H. Chen, N. De Marco, Y. Yang, Adv. Mater., 28 (2016), pp. 4415-4440. DOI URL
[32]	Y. Lee, J. Kwon, E. Hwang, C.H. Ra, W.J. Yoo, J.H. Ahn, J.H. Park, J.H. Cho, Adv. Mater., 27 (2015), pp. 41-46. DOI URL
[33]	J. Hu, Y. Shi, Z. Zhang, R. Zhi, H. Li, Y. Tang, S. Yang, B. Zou, J. Mater. Chem. C, 7 (2019), pp. 14938-14948. DOI URL
[34]	J. Wu, Y. Lu, S. Feng, Z. Wu, S. Lin, Z. Hao, T. Yao, X. Li, H. Zhu, S. Lin, Adv. Funct. Mater., 28 (2018), 1804712. DOI URL
[35]	Z. Li, H. Wang, D. Yang, L. Zhang, Y. Wang, T. Song, C. Fu, H. Zhang, S. Yang, B. Zou, J. Mater. Sci., 50 (2015), pp. 840-847. DOI URL
[36]	X. Song, X. Liu, D. Yu, C. Huo, J. Ji, X. Li, S. Zhang, Y. Zou, G. Zhu, Y. Wang, M. Wu, A. Xie, H. Zeng, ACS Appl. Mater. Interfaces, 10 (2018), pp. 2801-2809. DOI URL
[37]	C.F. Cai, B.P. Zhang, R.F. Li, H.Z. Wu, T.N. Xu, W.H. Zhang, J.F. Zhu, Europhys. Lett., 99 (2012), p. 37010. DOI URL
[38]	C. Fan, X. Xu, K. Yang, F. Jiang, S. Wang, Q. Zhang, Adv. Mater., 30 (2018), 1804707. DOI URL
[39]	J. Endres, M. Kulbak, L.F. Zhao, B.P. Rand, D. Cahen, G. Hodes, A. Kahn, J. Appl. Phys., 121 (2017), 035304. DOI URL
[40]	Z. Ning, O. Voznyy, J. Pan, S. Hoogland, V. Adinolfi, J. Xu, M. Li, A.R. Kirmani, J.-P. Sun, J. Minor, K.W. Kemp, H. Dong, L. Rollny, A. Labelle, G. Carey, B. Sutherland, I. Hill, A. Amassian, H. Liu, J. Tang, O.M. Bakr, E.H. Sargent, Nat. Mater., 13 (2014), pp. 822-828. DOI URL
[41]	M. Massicotte, P. Schmidt, F. Vialla, K. Watanabe, T. Taniguchi, K.J. Tielrooij, F.H.L. Koppens, Nat. Commun., 7 (2016), p. 12174. DOI PMID
[42]	Q. Wang, Y. Wen, K. Cai, R. Cheng, L. Yin, Y. Zhang, J. Li, Z. Wang, F. Wang, F. Wang, T.A. Shifa, C. Jiang, H. Yang, J. He, Sci. Adv., 7 (2018),p. eaap7916.
[43]	M. Peng, Y. Wang, Q. Shen, X. Xie, H. Zheng, W. Ma, Z. Wen, X. Sun, Sci. China Mater., 62 (2019), pp. 225-235. DOI URL
[44]	H. Kind, H. Yan, B. Messer, M. Law, P. Yang, Adv. Mater., 14 (2002), pp. 158-160. DOI URL
[45]	F. Liu, H. Shimotani, H. Shang, T. Kanagasekaran, V. Zólyomi, N. Drummond, V.I. Fal’ko, K. Tanigaki, ACS Nano, 8 (2014), pp. 752-760. DOI URL
[46]	Z. Zheng, L. Gan, J. Zhang, F. Zhuge, T. Zhai, Adv. Sci., 4 (2016), 1600316.
[47]	, J. Yoo, S. Jeong, S. Kim, J.H. Je., Adv. Mater., 27 (2015), pp. 1712-1717. DOI URL
[48]	Z. Ren, J. Sun, H. Li, P. Mao, Y. Wei, X. Zhong, J. Hu, S. Yang, J. Wang, Adv. Mater., 29 (2017), 1702055. DOI URL
[49]	J. Xu, H. Wang, S. Yang, G. Ni, B. Zou, J. Alloys Compd., 764 (2018), pp. 446-451. DOI URL
[50]	K.K. Manga, J. Wang, M. Lin, J. Zhang, M. Nesladek, V. Nalla, W. Ji, K.P. Loh, Adv. Mater., 24 (2012), pp. 1697-1702. DOI URL
[51]	T. Zhu, L. Zheng, X. Yao, L. Liu, F. Huang, Y. Cao, X. Gong, ACS Appl. Mater. Interfaces, 11 (2019), pp. 9205-9212. DOI URL
[52]	T.Y. Qu, Y. Sun, M.L. Chen, Z.B. Liu, Q.B. Zhu, B.W. Wang, T.Y. Zhao, C. Liu, J. Tan, S. Qiu, Q.W. Li, Z. Han, W. Wang, H.M. Cheng, D.M. Sun, Adv. Mater., 32 (2020), 1907288. DOI URL

Solution-processed, flexible and broadband photodetector based on CsPbBr₃/PbSe quantum dot heterostructures

RichHTML

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 11

References 52

Related Articles 15

Recommended Articles

Metrics

Comments

[1]	InSu Jin, Minwoo Park, Jae Woong Jung. Reduced interface energy loss in non-fullerene organic solar cells using room temperature-synthesized SnO₂ quantum dots [J]. J. Mater. Sci. Technol., 2020, 52(0): 12-19.
[2]	Guoquan Suo, Dan Li, Lei Feng, Xiaojiang Hou, Xiaohui Ye, Li Zhang, Qiyao Yu, Yanling Yang, Wei (Alex) Wang. Construction of SnS₂/SnO₂ heterostructures with enhanced potassium storage performance [J]. J. Mater. Sci. Technol., 2020, 55(0): 167-172.
[3]	Yiwen Hong, Jingli Xu, Jin Suk Chung, Won Mook Choi. Graphene quantum dots/Ni(OH)₂ nanocomposites on carbon cloth as a binder-free electrode for supercapacitors [J]. J. Mater. Sci. Technol., 2020, 58(0): 73-79.
[4]	Youliang Cheng, Mengsha Bai, Jian Su, Changqing Fang, Hang Li, Jing Chen, Jieming Jiao. Synthesis of fluorescent carbon quantum dots from aqua mesophase pitch and their photocatalytic degradation activity of organic dyes [J]. J. Mater. Sci. Technol., 2019, 35(8): 1515-1522.
[5]	Yihe Jia, Haicheng Wang, Long Xiang, Xiaoguang Liu, Wei Wei, Ning Ma, Dongbai Sun. Tunable emission properties of core-shell ZnCuInS-ZnS quantum dots with enhanced fluorescence intensity [J]. J. Mater. Sci. Technol., 2018, 34(6): 942-948.
[6]	Zhu Xiangxiang, Liu Zeke, Shi Guozheng, Gu Jinan, Wang Weiwei, Ma Wanli. Photovoltaic devices employing ternary PbS_xTe_1-x nanocrystals [J]. J. Mater. Sci. Technol., 2017, 33(5): 418-423.
[7]	Geeta Rani, P.D. Sahare. Structural and Spectroscopic Characterizations of ZnO Quantum Dots Annealed at Different Temperatures [J]. J. Mater. Sci. Technol., 2013, 29(11): 1035-1039.
[8]	Pengfei Li, Aihua Yao, Tian Zhou, Deping Wang. Fabrication of N-acetyl-L-cysteine-capped CdSe-polyelectrolytes @ Hydroxyapatite Composite Microspheres for Fluorescence Detection of Cu²⁺ Ions [J]. J. Mater. Sci. Technol., 2013, 29(11): 1104-1110.
[9]	Fedir Ivashchyshyn, Ivan Grygorchak, Olena Sudakova, Igor Bordun, Miroslav Micov. Influence of Magnetic Field and Lighting during the Creation Process of Nanohybrid Semiconductor-Nematic Structures on Their Impedance and Photo Response [J]. J Mater Sci Technol, 2011, 27(11): 973-978.
[10]	M. Thambidurai N. Murugan N. Muthukumarasamy S. Agilan S. Vasantha R. Balasundaraprabhu. Influence of the Cd/S Molar Ratio on the Optical and Structural Properties of Nanocrystalline CdS Thin Films [J]. J Mater Sci Technol, 2010, 26(3): 193-199.
[11]	Hui She,Biao Wang. Analysis of the Vertical and Lateral Interactions in a Multisheet Array of InAs/GaAs Quantum Dots [J]. J Mater Sci Technol, 2009, 25(05): 677-680.
[12]	Guozhen SHEN, Di CHEN, Yoshio B, O, Dmitri GOLBERG. One-Dimensional (1-D) Nanoscale Heterostructures [J]. J Mater Sci Technol, 2008, 24(04): 541-549.
[13]	Xiaosheng FANG, Ujjal K.Gautamy, Yoshio B, O, Dmitri GOLBERG. One-dimensional ZnS-based Hetero-, Core/shell and Hierarchical Nanostructures [J]. J Mater Sci Technol, 2008, 24(04): 520-528.
[14]	Jin ZOU. TEM Characterization of Nanostructure and Chemistry of Semiconductor Quantum Structures [J]. J Mater Sci Technol, 2005, 21(Supl.1): 111-113.
[15]	Zhongyuan YU, Yongqiang WEI. Explanation of Unusual Photoluminescence Behavior from InAs Quantum Dots with InAlAs Capping [J]. J Mater Sci Technol, 2005, 21(04): 559-562.