Fig.1. Growth rates of AlN films as a function of tri-methyl aluminum (TMA) pulse time (a) and of TiN films as a function of tetrakis (dimethylamino) titanium (TDMAT) pulse time (b), and the schematic illustration of the PEALD super-cycle used for depositing TiAlN films (c).

Fig.2. (a) Growth rate of TiAlN films obtained from the measured TiAlN thickness, and the expected TiAlN thickness calculated from the saturated growth rates of AlN and TiN. The round markers above the bars for TiN and TiAlN 10:1 (measured) indicate the electrical resistivity for both. (b) XRD patterns of AlN, TiN, TiAlN films, and SiO2 substrates.

Fig.3. Surface morphology of TiN (a, c) and TiAlN (b, d): plane-view field-emission scanning electron microscopy images of (a) TiN and (b) TiAlN, and atomic force microscopy images of (c) TiN and (d) TiAlN. All films were prepared on SS316L substrates. RMS: root-mean-square roughness value.

Fig.4. (a) Potentiostatic polarization curves and (b) local enlarged curves of bare SS316L, and 20?nm-thick TiN- and TiAlN-coated SS316L. Current densities were measured at 0.6?V vs. SCE in a 0.05?M H2SO4?+?2?ppm HF solution at 25?°C for 1?h.