Super-sensitive near-infrared organic photoelectric synaptic transistors based on sandwich-structured active layer

doi:10.1016/j.jmst.2025.05.041

Abstract

Abstract: High-sensitivity near-infrared organic photoelectric synaptic transistors present promising opportunities for developing machine-intelligent vision applications. However, the low sensitivity of organic photoelectric synaptic transistors remains a critical challenge, hindering their practical application. Although few approaches have attempted to address this issue, the short diffusion distance of photogenerated excitons limits the dissociation eﬃciency of excitons. Here, we present a super-sensitive near-infrared photoelectric synaptic transistor based on a sandwich structure photosensitive active layer and realize double-channel synergistic modulation. The devices have multiple functionalities that imitate the human visual system and achieve extremely high photoelectric sensitivity ( ∼ 10⁶ ) under near-infrared illumination (0.22 mW/cm²). The method of realizing a double-channel modulator with a sandwich structure can be applied to other organic polymer semiconductor materials to realize super-sensitive photoelectric synapses. This method paves the way for the invention of super-sensitive near-infrared neuromorphic imaging systems, which have enormous promise for artiﬁcial intelligence and intelligent night vision.

Key words: Near-infrared, Organic photoelectric Synaptic transistors, Super-sensitive, Sandwich-structured

Hongyan Yu, Jingchun Sun, Xiaoli Zhao, Ning He, Guodong Zhao, Jiayi Zou, Yanping Ni, Chuang Xue, Jing Sun, Junru Zhang, Guoqiang Ren, Pengbo Xi, Cong Zhang, Yijun Shi, Yanhong Tong, Qingxin Tang, Yichun Liu. Super-sensitive near-infrared organic photoelectric synaptic transistors based on sandwich-structured active layer[J]. J. Mater. Sci. Technol., 2026, 249: 12-21.

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