J. Mater. Sci. Technol. ›› 2022, Vol. 123: 136-143.DOI: 10.1016/j.jmst.2022.02.021
• Research Article • Previous Articles Next Articles
In-Su Kima, Jong-Un Woob, Hyun-Gyu Hwangb, Bumjoo Kima, Sahn Nahma,b,*(
)
Received:2021-11-27
Revised:2022-01-28
Accepted:2022-02-06
Published:2022-10-01
Online:2022-09-30
Contact:
Sahn Nahm
About author:*E-mail address: snahm@korea.ac.kr (S. Nahm).In-Su Kim, Jong-Un Woo, Hyun-Gyu Hwang, Bumjoo Kim, Sahn Nahm. Artificial synaptic and self-rectifying properties of crystalline (Na1-xKx)NbO3 thin films grown on Sr2Nb3O10 nanosheet seed layers[J]. J. Mater. Sci. Technol., 2022, 123: 136-143.
Fig. 1. (a) XRD patterns of the NKN film grown at 370 °C on S-TS substrates with different numbers of SNO monolayers. (b) Cross-sectional and (c) plan-view SEM images of the NKN film grown on an S-TS substrate with one SNO monolayer.
Fig. 2. (a) I-V plots measured at different VRESETs and (b) LRS and HRS currents obtained up to 50 cycles for the NKN memristor with one SNO monolayer. XPS N1s spectra of the TiN electrode in the (c) HRS and (d) LRS.
Fig. 3. I-V characteristics of the NKN memristors with one SNO monolayer for five consecutive (a-i) negative and (a-ii) positive voltage sweeps. (b) Change in conductance with the application of 100 P-spikes and 100 D-spikes. Variation in synaptic weight according to (c) retention time after the application of different numbers of P-spikes and (d) number of P-spikes applied with different pulse intervals. (e) Variation in Δw as a function of Δt.
Fig. 4. (a) I-V curve. (b) Resistances of the NKN memristor in the HRS and LRS measured at various temperatures. (c) Variation in ILRS/IHRS and rectification ratio as a function of voltage. (d) Retention properties. (e) Endurance measured at various voltages of the NKN memristor with two SNO monolayers.
Fig. 5. (a) ln(J/T2) versus E1/2 plot of the NKN memristor with two SNO monolayers in the HRS at a low voltage (> - 0.8 V). The inset shows the n value of the NKN film with two SNO monolayers measured by using an ellipsometer. Schematic of (b-i) direct tunneling and (b-ii) FN tunneling. ln(I/V2) versus (1/V) curve of the NKN memristor with two SNO monolayers in the (c) HRS and (d) LRS.
Fig. 6. Distribution of OVs in the NKN memristor with two SNO monolayers in the HRS (a) after the electroforming process and (b) near the set voltage. Distribution of OVs in the NKN memristor in the LRS with the application of (c) a low voltage and (d) reset voltage.
Fig. 7. I-V characteristics of the NKN memristors with two SNO monolayer for five successive (a) negative and (b) positive voltage sweeps. (c) Change in conductance with the application of 100 P-spikes and 100 D-spikes. (d) Variation in synaptic weight according to the number of P-spikes applied with different pulse intervals. (e) Variation in Δw as a function of Δt.
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