J Mater Sci Technol ›› 2007, Vol. 23 ›› Issue (01): 36-38.

• Letters • Previous Articles     Next Articles

980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

Xin GAO, Baoxue BO, Yi QU, Jing ZHANG, Hui LI   

  1. National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
  • Received:2006-01-13 Revised:2006-04-14 Online:2007-01-28 Published:2009-10-10
  • Contact: Xin GAO

Abstract: 980 nm InGaAs/GaAs separate confinement heterostructure (SCH) strained quantum well (QW) laser with non-absorbing facets was fabricated by using thermal treatment. Microchannel coolers with a five-layer thin oxygen-free copper plate structure were designed and fabricated through thermal bonding in hydrogen ambient. The highest CW (continuous wave) output power of 200 W for 5-bar arrays packaged by microchannel coolers was presented.

Key words: High power, Microchannel coolers, Stacked arrays, Non-absorbing facet