J Mater Sci Technol ›› 1998, Vol. 14 ›› Issue (4): 289-293.

• Articles •     Next Articles

Low Temperature Deposition of Titanium Nitride

Lishi WEN and Rongfang HUANG (Insitute of Metal Research, Chinese Academy of Sciences, Shenyan 110015, China)   

  • Received:1998-07-28 Revised:1998-07-28 Online:1998-07-28 Published:2009-10-10

Abstract: Low temperature deposition (LTD) is an actual frontier in materials sicence and engineering, especially for thin film technology In this paper the fundamentals and processing of lew temperature deposition of TiN coating are reviewed. The prerequisites of a law temperature deposition process are enough good densification, hardness and adhesion of the deposited coating. The fundamentals Of low temperature deposition are Structure zone model and nonequilibrium plasma vapor growth in a combined DC and pulsed electromagnetic fields. namely a combination of a DC bias voltage superimposed by a DC pulsed bias voltage with variable frequency and peak voltage height. Low temperature deposition processing can be realized simply with only stationary eledric fields. However, sensitivity of the product quality to the process parameters is the main barrier of this processing in the way to mass production. Low temperature deposition processing using the effects of a combined DC and pulsed electromagnetic fields has attained some promising results for the future commercialization. But they need Still further Systematic and deep study The application of low temperature deposition processing is nOt limited in range of low melting substrate materials. It is also important for internal stress control, defect minimization, microstructure densification and pedermance improvement for coatings on broad spectrum of substrate materials as well as for different types of applications.