Efficient electrical properties modulation of wafer-scale top gated MoS2 transistors via non-destructive annealing

doi:10.1016/j.jmst.2025.03.096

J. Mater. Sci. Technol. ›› 2026, Vol. 243: 256-264.DOI: 10.1016/j.jmst.2025.03.096

• Research article • Previous Articles Next Articles

Efficient electrical properties modulation of wafer-scale top gated MoS₂ transistors via non-destructive annealing

Jinshu Zhang^a,1, Yuxuan Zhu^a,1, Xiangqi Dong^a,1, Zhejia Zhang^a, Saifei Gou^a, Xinliu He^a, Haojie Chen^a, Mingrui Ao^a, Jiahao Wang^a, Sen Wang^a, Yan Hu^a, Qicheng Sun^a, Xinyu Wang^a, Yuchen Tian^a, Jieya Shang^a, Yufei Song^a, Xiaofei Yue^b, Chunxiao Cong^b, Lihui Zhou^c, Sheng Dai^c, Zihan Xu^d, Jing Wan^b, Haibing Qiu^e, Xiaojun Tan^f,*, Yi Wang^a,f,*, Wenzhong Bao^a,f,*

^aSchool of Microelectronics, Fudan University, Shanghai 200433, China；
^bSchool of Information Science and Technology, Fudan University, Shanghai 200433, China；
^cKey Laboratory for Advanced Materials and Feringa Nobel Prize Scientist Joint Research Center, Institute of Fine Chemicals, School of Chemistry & Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China；
^dShenzhen Six carbon Technology, Shenzhen 518055, China；
^eSchool of Semiconductor and Physics, North University of China, Taiyuan 030051, China；
^fShaoxin Laboratory, Shaoxing 312000, China

Received:2024-12-16 Revised:2025-02-28 Accepted:2025-03-25 Published:2026-02-01 Online:2025-05-22
Contact: *E-mail addresses: 20112020031@fudan.edu.cn (X. Tan), ywang16@gzu.edu.cn (Y. Wang), baowz@fudan.edu.cn (W. Bao).
About author:¹These authors contributed equally to this work.

Abstract

Abstract: Two-dimensional (2D) semiconductors have been widely investigated for next-generation electronic devices due to their advantages, such as the absence of dangling bonds, single-atomic-layer thickness, and tunable energy bands. The large-scale applications of 2D semiconductors in integrated circuits are contingent upon the homogeneity of the electrical properties in devices. However, the efficient and moderate modulation methods developed for top gated field-effect transistors (TG-FETs) based on 2D materials remain a major challenge. In this work, the electrical properties of TG-FETs made of monolayer MoS₂ were investigated under non-destructive annealing conditions in oxygen (O₂) and hydrogen-argon (H₂-Ar) atmosphere. The results show that the threshold voltage of the TG-FETs can be effectively adjusted by different atmospheres, with O₂ annealing that shifts it positively while H₂-Ar that shifts it negatively, and in particular, O₂ annealing at 150 °C significantly repairs the defects in the dielectric layer and reduces the hysteresis. Furthermore, both O₂ and H₂-Ar annealing can regulate the switching threshold voltage of the inverters, providing a new method for optimizing multilevel logic circuits. This work represents a significant advancement in the non-destructive modulation of electrical properties, which can facilitate the large-scale applications of 2D semiconductors in integrated circuits.

Key words: Two-dimensional (2D) semiconductors, Electrical properties modulation, Non-destructive annealing, Wafer-scale, Top-gate

Jinshu Zhang, Yuxuan Zhu, Xiangqi Dong, Zhejia Zhang, Saifei Gou, Xinliu He, Haojie Chen, Mingrui Ao, Jiahao Wang, Sen Wang, Yan Hu, Qicheng Sun, Xinyu Wang, Yuchen Tian, Jieya Shang, Yufei Song, Xiaofei Yue, Chunxiao Cong, Lihui Zhou, Sheng Dai, Zihan Xu, Jing Wan, Haibing Qiu, Xiaojun Tan, Yi Wang, Wenzhong Bao. Efficient electrical properties modulation of wafer-scale top gated MoS₂ transistors via non-destructive annealing[J]. J. Mater. Sci. Technol., 2026, 243: 256-264.

References

[1] M. Wu, Y. Xiao, Y. Zeng, Y. Zhou, X. Zeng, L. Zhang, W. Liao, InfoMat 3 (2020) 362-396.
[2] C. Liu, H. Chen, S. Wang, Q. Liu, Y.G. Jiang, D.W. Zhang, M. Liu, P. Zhou, Nat. Nanotechnol. 15(2020) 545-557.
[3] E. Liu, Y. Fu, Y. Wang, Y. Feng, H. Liu, X. Wan, W. Zhou, B. Wang, L. Shao, C. H. Ho, Y.S. Huang, Z. Cao, L. Wang, A. Li, J. Zeng, F. Song, X. Wang, Y. Shi, H. Yuan, H.Y. Hwang, Y. Cui, F. Miao, D. Xing, Nat. Commun. 6(2015) 6991.
[4] M.C. Lemme, D. Akinwande, C. Huyghebaert, C. Stampfer, Nat. Commun. 13(2022) 1392.
[5] H. Wang, L. Yu, Y.H. Lee, Y. Shi, A. Hsu, M.L. Chin, L.J. Li, M. Dubey, J. Kong, T. Palacios, Nano Lett. 12(2012) 4674-4680.
[6] L. Wang, L. Chen, S.L. Wong, X. Huang, W. Liao, C. Zhu, Y.F. Lim, D. Li, X. Liu, D. Chi, K.W. Ang, Adv. Electron. Mater. 5(2019) 1900393.
[7] N. Li, Q. Wang, C. Shen, Z. Wei, H. Yu, J. Zhao, X. Lu, G. Wang, C. He, L. Xie, J. Zhu, L. Du, R. Yang, D. Shi, G. Zhang, Nat. Electron. 3(2020) 711-717.
[8] L.R. Thoutam, R. Mathew, J. Ajayan, S. Tayal, S.V. Nair, Nanotechnology 34 (2023) 232001.
[9] X. Zou, J. Xu, H. Huang, Z. Zhu, H. Wang, B. Li, L. Liao, G. Fang, Nanotechnology 29 (2018) 245201.
[10] C. Sheng, X. Wang, X. Dong, Y. Hu, Y. Zhu, D. Wang, S. Gou, Q. Sun, Z. Zhang, J. Zhang, M. Ao, H. Chen, Y. Tian, J. Shang, Y. Song, X. He, Z. Xu, L. Li, P. Zhou, W. Bao, Adv. Funct. Mater. 34 (2024) 240 0 0 08.
[11] X. Chen, F. Du, C. Wang, H. Xu, Y. Zhang, F. Hou, X. Yang, Y. Wu, C. Tsai, Z. Chen, Y. Guo, Z. Liu, X. Wu, IEEE Trans. Electron Devices 68 (2021) 1378-1381.
[12] Q. Smets, D. Verreck, Y. Shi, G. Arutchelvan, B. Groven, X. Wu, S. Sutar, S. Baner-jee, A.N. Mehta, D. Lin, I. Asselberghs, I. Radu, in: in: IEEE Int. Electron Devices Meeting (IEDM), 2020„ pp. 3.1.1-3.1.4.
[13] K.H. Han, G.S. Kim, J. Park, S.G. Kim, J.H. Park, H.Y. Yu, ACS Appl. Mater. Inter-faces 11 (2019) 20949-20955.
[14] N. Kaushik, D.M.A.Mackenzie, K. Thakar, N.Goyal, B. Mukherjee, P. Boggild, D. H. Petersen, S. Lodha, npj 2D Mater. Appl. 1(2017) 34.
[15] J. Jiang, S. Dhar, Phys. Chem. Chem. Phys. 18(2016) 6 85-6 89.
[16] J. Roh, J.H. Ryu, G.W. Baek, H. Jung, S.G. Seo, K. An, B.G. Jeong, D.C. Lee, B.H. Hong, W.K. Bae, J.H. Lee, C. Lee, S.H. Jin, Small 15 (2019) e1803852.
[17] M. Giza, M. Swiniarski, A.P. Gertych, K. Czerniak-Losiewicz, M. Rogala, P.J. Kowalczyk, M. Zdrojek, ACS Appl. Mater. Interfaces 16 (2024) 48556-48564.
[18] Y. Shi, J. Liu, Y. Hu, W. Hu, L. Jiang, Nano Sel. 2(2021) 1661-1681.
[19] P. Zhang, Y. Zhang, Y. Wei, H. Jiang, X. Wang, Y. Gong, J. Semicond. 41(2020) 071901.
[20] K.T. Munson, R. Torsi, F. Habis, L. Huberich, Y.C. Lin, Y. Yuan, K. Wang, B. Schuler, Y. Wang, J.B. Asbury, J.A. Robinson, Adv. Electron. Mater. (2024) 2400403.
[21] R. Torsi, K.T. Munson, R. Pendurthi, E. Marques, B. Van Troeye, L. Huberich, B. Schuler, M. Feidler, K. Wang, G. Pourtois, S. Das, J.B. Asbury, Y.C. Lin, J.A. Robinson, ACS Nano 17 (2023) 15629-15640.
[22] K. Andrews, A. Bowman, U. Rijal, P.Y. Chen, Z. Zhou, ACS Nano 14 (2020) 6232-6241.
[23] C. Liu, X. Zou, Y. Lv, X. Liu, C. Ma, K. Li, Y. Liu, Y. Chai, L. Liao, J. He, Nat. Nanotechnol. 19(2024) 448-454.
[24] P. Luo, C. Liu, J. Lin, X. Duan, W. Zhang, C. Ma, Y. Lv, X. Zou, Y. Liu, F. Schwierz, W. Qin, L. Liao, J. He, X. Liu, Nat. Electron. 5(2022) 849-858.
[25] J. Kang, W. Liu, D. Sarkar, D. Jena, K. Banerjee, Phys. Rev. X 4 (2014) 031005.
[26] A. Rai, H. Movva, A. Roy, D. Taneja, S. Chowdhury, S. Banerjee, Crystals 8 (2018) 316.
[27] A .S. Bandyopadhyay, G.A. Saenz, A .B. Kaul, Surf. Coat. Technol. 381(2020) 125084.
[28] Y. Zheng, J. Gao, C. Han, W. Chen, Cell Rep. Phys. Sci. 2(2021) 100298.
[29] M.S. Choi, M. Lee, T.D. Ngo, J. Hone, W.J. Yoo, Adv. Electron. Mater. 7(2021) 2100449.
[30] J. Roh, J.-H. Lee, S.H. Jin, C. Lee, J. Inf. Disp. 17(2016) 103-108.
[31] S. Mazumder, Z.-G. Wu, Y.-H. Wang, ECS J. Solid State Sci. Technol. 11(2022) 065002.
[32] D. Somvanshi, E. Ber, C.S. Bailey, E. Pop, E. Yalon, ACS Appl. Mater. Interfaces 12 (2020) 36355-36361.
[33] Y.Y. Illarionov, T. Knobloch, B. Uzlu, A.G. Banshchikov, I.A. Ivanov, V. Sverdlov, M. Otto, S.L. Stoll, M.I. Vexler, M. Waltl, Z. Wang, B. Manna, D. Neumaier, M.C. Lemme, N.S. Sokolov, T. Grasser, npj 2D Mater.Appl. 8(2024) 23.
[34] J. Jiang, Z. Zheng, J. Guo, Phys. B-Condens. Matter 498 (2016) 76-81.
[35] Y.A. Kwon, J. Kim, S.B. Jo, D.G. Roe, D. Rhee, Y. Song, B. Kang, D. Kim, J. Kim, D. W. Kim, M.S. Kang, J. Kang, J.H. Cho, Nat. Electron. 6(2023) 443-450.
[36] M. Jaikissoon, J.-S. Ko, E. Pop, K.C. Saraswat, in: Device Research Conference (DRC) (2023) 1-2.
[37] H. Xu, J. Xing, J.-H. Lu, X.Han, D. Li, Z. Zhou, L.-H. Bao, H.-J. Gao, Y. Huang, Appl. Surf. Sci. 484(2019) 39-44.
[38] S. Park, A.T.Garcia-Esparza, H.Abroshan, B. Abraham, J. Vinson, A. Gallo, D. Nordlund, J. Park, T.R. Kim, L. Vallez, R. Alonso-Mori, D. Sokaras, X. Zheng, Adv. Sci. 8(2021) 2002768.
[39] Z. Li, L. Liu, J.-P. Xu, IEEE Trans. Electron Devices 68 (2021) 4614-4617.
[40] Y. Zou, P. Li, C. Su, J. Yan, H. Zhao, Z. Zhang, Z. You, ACS Nano 18 (2024) 9627-9635.
[41] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotechnol. 6(2011) 147-150.
[42] D. Kim, J.H. Kim, W.S. Choi, T.J. Yang, J.T. Jang, A. Belmonte, N. Rassoul, S. Sub- hechha, R.Delhougne, G.S. Kar, W. Lee, M.H. Cho, D. Ha, D.H. Kim, Sci. Rep. 12(2022) 19380.
[43] S. Pandey, P. Kothari, S.K. Sharma, S. Verma, K.J. Rangra, J. Mater. Sci.-Mater. Electron. 27(2016) 7055-7061.
[44] W. Choi, Y.-S. Seo, J.-Y. Park, K.B. Kim, J. Jung, N. Lee, Y. Seo, S. Hong, IEEE Trans. Nanotechnol. 14(2015) 70-74.
[45] J. Kim, M.C. Kim, J. Yu, K. Park, Curr. Appl. Phys. 10 (2010) S4 95-S4 98.
[46] C. Lee, H. Yan, L.E. Brus, T.F. Heinz, J. Hone, S. Ryu, ACS Nano 4 (2010) 2695-2700.
[47] A. Piazza, F. Giannazzo, G. Buscarino, G. Fisichella, A. Magna, F. Roccaforte, M. Cannas, F.M. Gelardi, S. Agnello, Beilstein J. Nanotechnol. 8(2017) 418-424.
[48] Y. Zhu, J. Lim, Z. Zhang, Y. Wang, S. Sarkar, H. Ramsden, Y. Li, H. Yan, D. Phuyal, N. Gauriot, A. Rao, R.L.Z. Hoye, G. Eda, M. Chhowalla, ACS Nano 17 (2023) 13545-13553.
[49] J. Ma, X. Chen, X. Wang, J. Bian, L. Tong, H. Chen, X. Guo, Y. Xia, X. Zhang, Z. Xu, C. He, J. Qu, P. Zhou, C. Wu, X. Wu, W. Bao, ACS Appl. Mater. Interfaces 14 (2022) 11610-11618.
[50] Y. Xu, T. Liu, K. Liu, Y. Zhao, L. Liu, P. Li, A. Nie, L. Liu, J. Yu, X. Feng, F. Zhuge, H. Li, X. Wang, T. Zhai, Nat. Mater. 22(2023) 1078-1084.
[51] Y. Peng, L. Li, B. Huang, J. Tian, X. Li, J. Tang, Y. Chu, D. Shi, L. Du, N. Li, G. Zhang, Adv. Funct. Mater. 33(2023) 2304879.
[52] E. Yang, S. Hong, J. Ma, S.J. Park, D.K. Lee, T. Das, T.J. Ha, J.Y. Kwak, J. Chang, ACS Nano 18 (2024) 22965-22977.
[53] R. Tseng, S.T. Wang, T. Ahmed, Y.Y. Pan, S.C. Chen, C.C. Shih, W.W. Tsai, H. C. Chen, C.C. Kei, T.T. Chou, W.C. Hung, J.C. Chen, Y.H. Kuo, C.L. Lin, W.Y. Woon, S.S. Liao, D.H. Lien, Nat. Commun. 14(2023) 5243.
[54] H.-W. Park, K.-B. Chung, J.-S. Park, Curr. Appl. Phys. 12(2012) S164-S167.
[55] C. Zhou, X. Wang, S. Raju, Z. Lin, D. Villaroman, B. Huang, H.L. Chan, M. Chan, Y. Chai, Nanoscale 7 (2015) 8695-8700.
[56] X. Zhao, J. Xu, L. Liu, P.-T. Lai, W.-M. Tang, IEEE Trans. Electron Devices 66 (2019) 4337-4342.
[57] D. Zeng, Z. Zhang, Z. Xue, M. Zhang, P.K. Chu, Y. Mei, Z. Tian, Z. Di, Nature 632 (2024) 788-794.
[58] A. Provias, T. Knobloch, A. Kitamura, K.P. O’Brien, C.J. Dorow, D. Waldhoer, B. Stampfer, A.V. Penumatcha, S. Lee, R. Ramamurthy, S. Clendenning, M. Waltl, U. Avci, T. Grasser, IEEE Int. Electron Devices Meeting (IEDM) (2023) 1-4.
[59] K.P.O’Brien, C.J. Dorow, A. Penumatcha, K. Maxey, S. Lee, C.H. Naylor, A. Hsiao, B. Holybee, C. Rogan, D. Adams, T. Tronic, S. Ma, A. Oni, A.S. Gupta, R. Bristol, S. Clendenning, M. Metz, U. Avci, in: in: IEEE Int. Electron Devices Meeting (IEDM), 2021„ pp. 7.1.1-7.1.4.
[60] C.H. Suh, IEEE Trans. Electron Devices 34 (1987) 906-910.
[61] J. Zheng, Y. Lyu, B. Wu, S. Wang, EnergyChem 2 (2020) 10 0 039. [62] N. Dumaresq, N. Brodusch, S. Bessette, R. Gauvin, Ultramicroscopy 262 (2024) 113977.
[63] O. Renault, D. Samour, J.F. Damlencourt, D. Blin, F. Martin, S. Marthon, N.T.Bar- rett, P.Besson, Appl. Phys. Lett. 81(2002) 3627-3629.
[64] F. Piallat, V. Beugin, R. Gassilloud, L. Dussault, B. Pelissier, C. Leroux, P. Caubet, C. Vallée, Appl. Surf. Sci. 303(2014) 388-392.
[65] K. Yan, W. Yao, Y. Zhao, L. Yang, J. Cao, Y. Zhu, Appl. Surf. Sci. 390(2016) 260-265.
[66] C.-C. Hsu, T.-C. Wang, C.-C. Tsao, J. Alloys Compd. 769(2018) 65-70.
[67] T. Masuhara, M. Nagata, N. Hashimoto, IEEE J. Solid-State Circuit 7 (1972) 224-231.

Efficient electrical properties modulation of wafer-scale top gated MoS₂ transistors via non-destructive annealing

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