Fabricating S-scheme Sb2S3@CdSexS1-x quasi-one-dimensional heterojunction photoanodes by in-situ growth strategy towards photoelectrochemical water splitting

doi:10.1016/j.jmst.2024.02.049

Abstract

Abstract: Nowadays, energy and environmental problems are becoming increasingly prominent in society, the development of clean and environmentally friendly energy is in line with the construction of ecological civilization and energy, which have attracted the attention of many researchers over the past decades. Narrow band gap semiconductor Sb₂S₃ is widely used in the area of solar cells because of its high light absorption coefficient and suitable bandgap width. However, numerous deep-level defects provide plentiful photogenerated carrier recombination sites, which restricts the improvement of photoelectrochemical properties seriously. In this work, S-scheme Sb₂S₃@CdSe_xS_1-_x core-shell quasi-one-dimensional heterojunction photoanodes were prepared on the FTO substrate by a two-step vapor transport deposition (VTD) method, chemical bath deposition (CBD) and in-situ selenization method. The results showed that CdSe_xS_1-_x nanoparticles (NPs) were tightly coated on the Sb₂S₃ nanorods (NRs). The photocurrent density of the Sb₂S₃@CdSe_xS_1-_x photoanodes was 1.61 mA cm^-2 under 1.23 V_RHE. Compared with the Sb₂S₃ photoanodes (0.61 mA cm^-2), Sb₂S₃@CdSe_xS_1-_x photoanodes obtained a 2.64-fold improvement, and the dark current was effectively reduced. It showed excellent stability and fast photocurrent response in a 600 s optical stability test. It was concluded that: (1) The charge transfer mechanism of the S-scheme can avoid the problem of high recombination rate of photogenerated charge carriers due to the defects of Sb₂S₃ effectively, and realized spatial separation of photogenerated carriers. (2) The [hk1] oriented Sb₂S₃ NRs and the formed quasi-one-dimensional heterostructures promote efficient carrier transport. (3) The introduction of Se effectively regulated the band structure of CdS, slowed down the photocorrosion of S, and improved the stability of the photoelectrodes significantly.

Key words: Sb₂S₃ nanorods, Vapor transport deposition, In-situ selenization, S-scheme heterojunction, Photoelectrochemical performance

Dekang Liu, Dekai Zhang, Yishan Wang, Enzhou Liu, Hui Miao. Fabricating S-scheme Sb₂S₃@CdSe_xS_1-_x quasi-one-dimensional heterojunction photoanodes by in-situ growth strategy towards photoelectrochemical water splitting[J]. J. Mater. Sci. Technol., 2024, 201: 250-260.

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Fabricating S-scheme Sb₂S₃@CdSe_xS_1-_x quasi-one-dimensional heterojunction photoanodes by in-situ growth strategy towards photoelectrochemical water splitting

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