Tunable quantum Shubnikov-de Hass oscillations in antiferromagnetic topological semimetal Mn-doped Cd3As2

doi:10.1016/j.jmst.2020.11.023

Abstract

Abstract:

Three-dimensional Dirac semimetal Cd₃As₂ has been considered as an excellent candidate for applications of electronic devices owing to its ultrahigh mobility and air-stability. However, current researches are focused mainly on the use of gate-voltage to control its carrier transport tunability, while the manipulation of transport properties by element-doping is quite limited. Here we report the tunable magneto-transport properties by adjusting Mn-doping in the Cd₃As₂ compound. We find that Mn-element doping has a strong influence on the Fermi level positions, and the Fermi energy approaches to Dirac point with higher Mn-doping. More importantly, the introduction of Mn atoms transforms diamagnetic Cd₃As₂ to antiferromagnetic (Cd, Mn)₃As₂, which provides an approach to control topological protected Dirac materials by manipulating antiferromagnetic order parameters. The Shubnikov-de Hass oscillation originates from the surface states, and the Landau fan diagram yields a nontrivial Berry phase, indicating the existence of massless Dirac fermions in the (Cd_1-_xMn_x)₃As₂ compounds. Our present results may pave a way for further investigating antiferromagnetic topological Dirac semimetal and expand the potential applications in optoelectronics and spintronics.

Key words: Mn-doping, Dirac topological semimetal, Diamagnetic, Antiferromagnetic, Shubnikov-de Hass oscillation

Jie Guo, Xinguo Zhao, Naikun Sun, Xiaofei Xiao, Wei Liu, Zhidong Zhang. Tunable quantum Shubnikov-de Hass oscillations in antiferromagnetic topological semimetal Mn-doped Cd₃As₂[J]. J. Mater. Sci. Technol., 2021, 76: 247-253.

Figures/Tables 6

Fig. 1. (a-c) XRD patterns of (Cd1-xMnx)3As2 (x = 0, 0.1 and 0.20) compounds. The patterns were refined by Rietica software. Exp indicates the experimental data. Cal indicates the calculated pattern. Bragg indicates the positions of Bragg diffraction peaks. Diff indicates the differences between experimental data and the calculated data. (d) The lattice constant a and c for (Cd1-xMnx)3As2 as a function of x, and the inset shows the details of diffraction peaks from 39.6 to 40.8 degrees.

Fig. 2. Magnetic properties of (Cd1-xMnx)3As2 compounds. (a) Temperature dependence of the magnetization at 1 T of (Cd1-xMnx)3As2 (0 ≤ x ≤ 0.20). (b) Details of magnetization curves around antiferromagnetic Néel points. (c) Field dependence of the magnetization of (Cd1-xMnx)3As2 (0 ≤ x ≤ 0.10).

Fig. 3. SdH oscillations of (Cd1-xMnx)3As2 compounds. (a) Field dependent resistance of (Cd0.9Mn0.1)3As2. (The curves recorded at temperatures higher than 2 K are vertically shifted by a step of 0.02 Ω for clarity). (b)-(d) Temperature dependent SdH oscillation amplitude ΔRxx as a function of 1/B for the (Cd1-xMnx)3As2 (x = 0, 0.05, 0.10) compounds. (e) Fast Fourier transformation of SdH oscillation with a single frequency for (Cd1-xMnx)3As2 (x = 0, 0.01, 0.03, 0.05, 0.07 and 0.10). The curves measured at different temperature are marked by different colors, corresponding to the color bar.

Fig. 4. Relevant parameters acquired from the fitting curves of (Cd1-xMnx)3As2 compounds. (a) Temperature dependence of normalized ΔRxx with different components. The solid curves are fittings to the Lifshitz-Kosevich formula. (b) Values of cyclotron effective mass for compounds with x = 0-0.10. (c) The logarithmic ΔRxx(T)sinh(λ(T))/R0 versus 1/B for extracting the quantum lifetime. (d) Values of the mean free path for compounds with x = 0-0.10.

Fig. 5. (a) Fermi energy for (Cd1-xMnx)3As2 (0 ≤ x ≤ 0.10) compounds as a function of x. The inset shows a schematic band structure and the shift of Fermi level toward the conduction band for Cd3As2 and (Cd0.9Mn0.1)3As2 compounds. (b) The field-dependent Hall resistivities at 2 K for the compounds with x = 0-0.10. The red dotted line illustrates the nonlinearity of (Cd0.9Mn0.1)3As2 compound for comparison. (c) The carrier densities originated from Hall effect (nHall) and SdH oscillations (nSdH). (d) The Landau fan diagram constructed from the analysis of Δσxx data for the (Cd1-xMnx)3As2 (0 ≤ x ≤ 0.10) compounds. The inset represents all intercepts lie between 1/2-1/8 and 1/2 + 1/8.

Table 1 Estimated parameters from SdH oscillations at T =2 K of (Cd1-xMnx)3As2 compounds.

x	F_SdH (T)	k_F (Å^-1)	m_cyc (m₀)	v_F (10⁶ m s^-1)	E_F (meV)	τ (10^-13 s)	I (nm)	μ_SdH (cm² V^-1 s^-1)
0	90.8	0.053	0.061	0.86	347	1.92	165	5529
0.01	86.2	0.051	0.060	0.85	328	1.93	164	5599
0.03	74.5	0.048	0.058	0.84	295	2.30	192	7005
0.05	52.9	0.040	0.047	0.85	256	2.62	222	9683
0.07	48.3	0.038	0.048	0.78	235	3.04	238	10,988
0.10	36.2	0.033	0.038	0.80	215	3.61	291	16,827

References 47

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Tunable quantum Shubnikov-de Hass oscillations in antiferromagnetic topological semimetal Mn-doped Cd₃As₂

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