Structural Characterization of Laser Bonded Sapphire Wafers Using a Titanium Absorber Thin Film

doi:10.1016/j.jmst.2014.12.007

Abstract

A. de Pablos-Martí, n, S. Tismer, Th. H, che. Structural Characterization of Laser Bonded Sapphire Wafers Using a Titanium Absorber Thin Film[J]. J. Mater. Sci. Technol., 2015, 31(5): 484-488.

Figures/Tables 4

Optical micrograph of the irradiated pattern: (a) overview, (b, c) interface.

SAM micrograph of the laser irradiated pattern in Fig. 1.

TEM micrographs of the cross-section of the bond: (a) overview, (b, c) detailed micrographs.

STEM micrograph and EDX line scan across the cross-section of the bond (a) and across one of the particles (b). The orange line indicates the direction of the EDX line scans. The red square in (b) indicates the position of the EDXS point analysis. The yellow square indicates the reference image for the drift correction.

References

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