J Mater Sci Technol ›› 2008, Vol. 24 ›› Issue (02): 261-164.

• Research Articles • Previous Articles     Next Articles

Analysis of Microstructure of Silicon Carbide Fiber by Raman Spectroscopy

Baohong JIN, Nanlin SHI   

  1. Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
  • Received:2006-06-09 Revised:2008-01-02 Online:2008-03-28 Published:2009-10-10
  • Contact: Nanlin SHI

Abstract: The SiC fiber was prepared by chemical vapour depostion, which consists of tungsten core, SiC layer and carbon coating. The microstructure of the fiber was investigated using Raman spectroscopy, illustrating SiC variation in different region of the fiber. The result shows that the SiC layer can be subdivided into two parts in the morphologies of SiC grains; their sizes increase and their orientations become order with increasing distance from the fiber center. It is demonstrated that the mount of free carbon in the fiber is responsible for the variation of SiC grains in sizes and morphologies. The analysis of Raman spectra shows that the predominant β-SiC has extensive stacking faults within the crystallites and mixes other polytypes and amorphous SiC into the structure in the fiber.

Key words: Raman spectra, Optical phonon, SiC fiber, Carbon content