Abstract: Electrically pumped micron/sub-micron lasers, featuring compact size, high quality (Q)-factor, ultralow threshold, stable output power, and distinct modes, are promising for optical interconnects, data communications, biosensing, structured-light-based facial recognition, and augmented reality glasses. However, the implementation of these lasers encounters considerable challenges due to the lack of exceptional optical gain materials to achieve population inversion at low injection currents. Herein, an Indium-doping approach is newly employed to improve the optoelectronic properties of ZnO microwires. Joint experiment-theory characterizations reveal that the resulting samples possess high crystal quality, droop-free luminescence, satisfactory thermal stability, high carrier concentration and mobility properties. On this basis, we successfully report a low-threshold (11.8 mA) electrically driven ultraviolet Fabry-Pérot (F-P) microlaser diode with distinguishable multimodes, integrating a single ZnO:In microwire as the gain medium. The laser produces an impressive output power of 0.56 mW at a high current density of 2.02×10⁴ A/cm², which is attributed to the saturation of nonradiative Auger recombination processes. Moreover, it exhibits fascinating characteristics, including a high Q-factor (∼2173), effective suppression of spontaneous emission, robust operational stability and reliability. The microlaser excels amongst its competitors, advancing toward the practical applications that operate under high current injection levels. Our research offers a feasible approach for developing advanced electrical pumping lasers, wherein the device performance is no longer compromised by the scarcity of high-quality gain media.

Key words: Fabry-Pérot microlaser, Low-threshold, Distinct multimodes, High output power, Thermal stability, ZnO:In microwire