Photoelectronic properties and devices of 2D Xenes

doi:10.1016/j.jmst.2022.02.038

Abstract

Abstract:

Two-dimensional materials, especially graphene-like emerging single-element materials two-dimensional (2D) Xenes, have attracted great research interest since the advent of the graphene. In this review paper, 12 kinds of different Xenes were introduced according to the group and element quality, and their main synthesis methods are outlined. The advantages and limitations of the synthesis methods are analyzed in detail. By summarizing the current photoelectronic properties of 2D Xenes materials, it is found that Xenes in the same group have similar properties, such as the buckling properties of the fourth group and the anisotropy of the fifth group. In addition, the performance of photoelectronic applications based on 2D Xenes materials are summarized, and some possible methods are proposed to improve the performance of future 2D Xenes material photoelectronic devices.

Key words: 2D materials, 2D Xenes, Photoelectric properties, Phtoelectronic

Shiqi Li, Guoyi Huang, Yiding Jia, Bing Wang, Hongcheng Wang, Han Zhang. Photoelectronic properties and devices of 2D Xenes[J]. J. Mater. Sci. Technol., 2022, 126: 44-59.

Figures/Tables 14

Fig. 1. Types of 2D Xenes (right panel) and their positions in the periodic table of elements (left panel). The optoelectronic properties and applications of related Xenes are summarized in the middle panel.

Fig. 2. Crystal structures of 2D Xenes (Group III, IV). (a) Top view of borophene. (b) Side view of borophene (Reproduced with permission [83]). (c) Crystal structure of gallenene: (i) The diamond-shaped gallenene monolayer structure, extracted from the block α-Ga along the 010. (ii) The gallenene monolayer honeycomb structure, extracted from the block α-Ga along the 100 direction (Reproduced with permission [86]). (d) Crystal structures of silicene (Reproduced with permission [42]). (e) Top view of the germanene configuration. The blue, yellow, and orange spheres represent Pt, protruding Ge, and other Ge atoms, respectively. (f) Simulated STM image. (Reproduced with permission [87]). (g) Top view and side view of the crystal structure of stanene. (Reproduced with permission [88]). (h) Structural model of a plumbene overlayer on Pd(111) (Reproduced with permission [54]).

Fig. 3. Crystal structures of 2D Xenes (Group V,VI). (a) 2D phosphorene structures with a folded structure. (Reproduced with permission [97]). (b) Top view and side view of a arsenene. (Reproduced with permission [126]). (c) Top view of antimonene (left), and side view of mono and bilayer antimonene lattices including water molecules as used for DFT calculations (Right) (Reproduced with permission [113]). (d) Sketch of a bismuthene layer placed on the threefold-symmetric SiC(0001) substrate. (Reproduced with permission [118]). (e) Left: the 0D atomic ring of selenene structure. Middle: the 1D spiral atomic chain of selenene structure. Right: the 2D atomic layer of selenene structure. (f) Rectangular tellurene and square tellurene (Reproduced with permission [127]).

Table 1. Band gap and carrier mobility of 2D Xenes.

Group	Element	Xene	Band gap	Carrier mobility	Refs.
IIIIVVVI	B	Borophene	Metal	X: 14.8 × 10⁵ cm² V⁻¹ s⁻¹ Y: 28.4 × 10⁵ cm² V⁻¹ s⁻¹	[83,131]
IIIIVVVI	Ga	Gallenene	Metal	-	[85]
	Si	Silicene	0.43 eV	∼100 cm² V⁻¹ s⁻¹	[42]
	Ge	Germanene	0.79 eV	∼10⁴ cm² V⁻¹ s⁻¹	[132]
	Sn	Stanene	0.15 eV	(3-4) × 10⁶ cm² V⁻¹ s⁻¹	[133]
	Pb	Plumbene	0.4 eV	-	[54]
	P	Phosphorene	0.3-2 eV	∼10³ cm² V⁻¹ s⁻¹	[133]
	As	Arsenene	1.2-1.4 eV	∼10³ cm² V⁻¹ s⁻¹	[32]
	Sb	Antimonene	2.28 eV	∼10³ cm² V⁻¹ s⁻¹	[32]
	Bi	Bismuthene	0.555 eV	∼10³ cm² V⁻¹ s⁻¹	[32]
	Se	Selenene	0.1 eV	-	[127]
	Te	Tellurene	0.31-1.3 eV	∼10⁵ cm² V⁻¹ s⁻¹	[127,134]

Fig. 4. (a) Bottom-up synthesis. (b) Top-down synthesis (Reproduced with permission [2]). (c) AFM image of SBP thin film on silicon substrate: (i) Shows the spacing between each layer. (ii) It shows that the gap between the two layers is about 8.5 Å (Reproduced with permission [136]). (d) The experimental (i) and characterization (ii) of borophene formed on Ag(111) substrate by MBE (Reproduced with permission [44]). (e) Raman spectrum of Bi peeled off to the flexible epoxy resin by mechanical peeling. Inset: Photograph of flexible Bi after epoxy peeling (Reproduced with permission [149]). (f) The AFM height image of the solvent exfoliated BP nanosheets deposited on SiO2/Si substrates with different heights (Reproduced with permission [150]).

Fig. 5. (a) The relative transmittance changes measured on 25 nm, 350 nm and 1100 nm thick BP films in the direction of the input polarizing armchair. (Reproduced with permission [171]). (b) Schematic diagram of the experimental setup for nonlinear optics. i) Orientation of nanoflakes without laser irradiation. ii) The arrangement of nano flakes under laser irradiation. (Reproduced with permission [115]). (c) Saturable absorption mechanism of bismuthene (Reproduced with permission [123]). (d): i) Absorption coefficient of borophene, and ii) reflectivity of borophene along the a and b directions. (Reproduced with permission [84]). (e) The bandstructure of BP in the direction of armchair (Z-L) and zigzag (Z-T') is determined by ARPES measurement. (Reproduced with permission [174]). (f) Single-layer BP simulation ground state exciton wave function. (g) Polarization dependent PL spectrum of BP (Reproduced with permission [175]).

Fig. 6. (a) Extinction ratio of bilayer tellurene. (i) covalent bond 1-, (ii) close-packed nonbond 2-, and (iii) nonbond 3-directions. (Reproduced with permission [182]). (b) Raman spectra of tellurene with different thicknesses (Reproduced with permission [130]). (c) Optical absorption spectrum of FL-α-Te. (i, ii) The polarization direction of the incident light is along x, y and z, and the absorbance of each layer of 2L- and 6L-α-Te. (iii) The absorbance of each layer along the y direction of the FL-α-Te with a thickness of 2 L to 6 L (Reproduced with permission [183]).

Fig. 7. (a) Spectra in fiber laser with BP as SA (Reproduced with permission [43]). (b) Pulse sequence output based on bismuthene laser is 250 mW (Reproduced with permission [123]). (c) Integrate BP as SA into ultrafast laser devices (Reproduced with permission [202]).

Table 2. Summary of 2D-Xenes-based photodetectors by time.

Time	Xene	Mechanism	R (A/W)	D* (Jones)
2015	Phosphorene	PCE	9 × 10⁴	3 × 10¹³
2019	Selenene	PVE	0.408	1.3 × 10¹³
2019	Tellurene	PVE	15	1.24 × 10⁸
2020	Germanene	PEC	2.4 × 10⁻⁵	6.7 × 10⁷
2020	Antimonene/CdS QDs	PEC	1 × 10⁻⁵	⁻
2021	Borophene/n-Si	PVE	1.04	1.27 × 10¹¹
2021	Silicene/MoS₂	PCE	5.66 × 10⁵	4.76 × 10¹⁰
2021	Bismuthene/Si	PVE	80	1.9 × 10¹⁰

Fig. 8. (a, b) Response of photodetectors based on few layers of black phosphorous at VBG = −80 V (Reproduced with permission [46]). (c) At 300 K and 80 K, the I-V characteristics of the photodetector under different light intensity conditions of 530 nm. (d) At 300 K and 80 K, Switching ratio of different gate voltages (Reproduced with permission [213]). (e) Rise time (tr) and decay time (td) of germanene photodetector (Reproduced with permission [214]). (f) schematic view of a borophene-based photodetector (Reproduced with permission [215]). (g) Responsivity and detectivity of the silicene/MoS2-based photodetector at different intensities of the illuminating light [216]). (h) Photocurrent generation in 2D Bi/Si(111) optoelectronic devices [217]).

Fig. 9. (a) The three-dimensional schematic diagram of the BP/MRR hybrid all-optical modulator. (b) Frequency response of modulator (Reproduced with permission [222]). (c) SXPM all-optical modulation system with two cross lights: (i) Diffraction ring images of different powers. (ii) Modulator based on 2D Te Ns realizes switch mode (Reproduced with permission [223]). (d) Energy level diagrams of the most commonly used materials of 1-5 layers of phosphorene and OPV, DSSC, QDSSC and PSC (Reproduced with permission [72]).

Fig. 10. (a) XPS VB spectrum of CS and bulk BP. (b) Photocatalysis principle diagram of FPS system under visible light irradiation. (c) Photocatalysis principle diagram of CS system under visible light irradiation (Reproduced with permission [234]). (d) Schematic diagram of Z scheme photocatalytic water splitting using BP/BiVO4 under visible light irradiation (Reproduced with permission [231]). (e) Nyquist plot of Bi NS with different thicknesses. (f) Bismuthene NS has long-term stability at a potential of −0.58 V (Reproduced with permission [233]).

Fig. 11. (a) Using std-BP film to detect NH3 gas, the relationship between resistance and time. (b) The relationship between signal-to-noise ratio and concentration (Reproduced with permission [170]). (c) Based on the tellurene sensor schematic. (d) I-V response of tellurene sensors (Reproduced with permission [235]). 2D Xenes optoelectronic devices explored by optimizing fabrication methods, constructing heterojunctions, etc.

Fig. 12. 2D Xenes optoelectronic devices explored by optimizing fabrication meth- ods, constructing heterojunctions, etc.

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