Magnetoresistance retraction behaviour of Ag/p‐Ge:Ga/Ag device under pulsed high magnetic field

doi:10.1016/j.jmst.2021.08.040

Abstract

Abstract:

In non-magnetic semiconductor materials, unsaturated magnetoresistance (MR) effect has attracted lots of attention due to its physical interests and potential applications in electronic devices. Under the extremely high magnetic field, the stability and reliability of MR effects based on the non-ohmic transport has been rarely researched. In this paper, the transport properties of non-magnetic Ag/p-Ge:Ga/Ag devices under 45 T pulsed high magnetic field at 300 K are investigated. It is found that in ohmic conduction region (I<5 mA) where the single dominant carrier is hole, the MR values increase with increasing the applied magnetic field, presenting a conventional unsaturated behavior. In the two non-ohmic regions (5 mA≤I ≤ 100 mA) where the transport is dominated by bipolar (electrons and holes), a MR retraction has been obviously observed under pulsed high magnetic field. Combining the Hall measurement results and calculation of Hall effect with bipolar-driven transport model, the mechanism of the MR retraction is analysed, in which the MR retraction may be related to the strong regulation of electron-to-hole density ratio by pulsed high magnetic field. This work provides a reference for evaluating the stability and reliability of the properties of non-magnetic semiconductor based MR devices under the interference of strong magnetic pulses.

Key words: Germanium-based device, Magnetoresistance, Bipolar transport, Retraction behavior, Pulsed high magnetic field

Xiong He, Zhengcai Xia, Haoyu Niu, Zhuo Zeng. Magnetoresistance retraction behaviour of Ag/p‐Ge:Ga/Ag device under pulsed high magnetic field[J]. J. Mater. Sci. Technol., 2022, 114: 1-6.

Figures/Tables 5

Fig. 1. (a) The V-I curve at 0 T and 300 K, where the insets are the schematic diagrams of the transport measurements and V-I curve in smaller applied current, respectively. (b) The V-I curves under different low static B at 300 K. (c) The calculated MR-B curves from the V-I curves. (d) The measured R-B curves.

Fig. 2. The measured R-B curves under pulsed high B at 300 K when (a) I<Ith and (b) I>Ith.

Fig. 3. (a) The measured VH-I curves under different low static B at 300 K. (b) VH-B curves in the three transport regions. (c) Schematic diagram of electron injected into p-type semiconductor. (d) Simulation results of pqRH v.s. n/p curve based on bipolar-driven transport model. (e) The RH-I curves under different low static B. (f) The RH-B curve at 50 mA and simulation results of pqRH v.s. (n/p)-1 curve.

Fig. 4. (a) and (b) The measured VH-B curves under pulsed high B at 300 K in the three transport regions. (c) and (d) The R-B and RH-B curves at 5 mA and 10 mA in the SCE&LII region, respectively. (e) and (f) The R-B and RH-B curves at 60 mA and 100 mA in the NDR region, respectively.

Fig. 5. (a) and (b) Schematic diagrams of the movement of electrons and holes under pulsed high B and low static B, respectively. (c) The RH-I curves under pulsed high B at 300 K.

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