Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device

doi:10.1016/j.jmst.2020.10.046

Abstract

Abstract:

Multilevel resistive switching (RS) is a key property to embrace the full potential of memristive devices for non-volatile memory and neuromorphic computing applications. In this study, we employed nanoparticulated cobaltite oxide (Co3O4) as a model material to demonstrate the multilevel RS and synaptic learning capabilities because of its multiple and stable redox state properties. The Pt/Co3O4/Pt memristive device exhibited tunable RS properties with respect to different voltages and compliance currents (CC) without the electroforming process. That is, the device showed voltage-dependent RS at a higher CC whereas CC-dependent RS was observed at lower CC. The device showed four different resistance states during endurance and retention measurements and non-volatile memory results indicated that the CC-based measurement had less variation. Besides, we investigated the basic and complex synaptic plasticity properties using the analog current-voltage characteristics of the Pt/Co3O4/Pt device. In particular, we mimicked the potentiation-depression and four-spike time-dependent plasticity (STDP) rules such as asymmetric Hebbian, asymmetric anti-Hebbian, symmetric Hebbian, and symmetric anti-Hebbian learning rules. The results of the present work indicate that the cobaltite oxide is an excellent nanomaterial for both multilevel RS and neuromorphic computing applications.

Key words: Multilevel resistive switching, Synaptic plasticity, STDP, Cobaltite oxide, Memristive device

Tukaram D. Dongale, Atul C. Khot, Ashkan V. Takaloo, Kyung Rock Son, Tae Geun Kim. Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device[J]. J. Mater. Sci. Technol., 2021, 78: 81-91.

Figures/Tables 9

Fig. 1. (a) FESEM and (b) high-resolution FESEM image of the Co3O4 NPs. (c) EDS mapping of the Co3O4 NPs and corresponding (d) Co and (e) O maps. (f) EDS spectrum of the Co3O4 NPs.

Fig. 2. Structural and elemental characterization of the Co3O4 NPs. (a) XRD spectra of the Co3O4 NPs. (b) XPS survey spectra of Co3O4 NPs and narrow scan spectra of (c) Co and (d) O.

Fig. 3. Forming-free and voltage-dependent I-V characteristics of Pt/Co3O4/Pt device on (a) linear and (b) semilog scale.

Fig. 4. Voltage-dependent (a) time-domain flux, (b) time-domain charge, and (c) charge-flux properties of the Pt/Co3O4/Pt device. Voltage-dependent (d) A2, (e) $B_{C W}^{N}$, and (f) memristive hysteresis area of the Pt/Co3O4/Pt device.

Fig. 5. Demonstration of multilevel RS by modulating the VSTOP voltage during (a) positive-bias and (b) negative-bias region at 10-3 A CC. The multilevel RS can be achieved by modulating VSTOP voltage during (c) positive-bias and (d) negative-bias regions at 10-6 A CC.

Fig. 6. CC-dependent (a) ISET and (b) IRESET at different voltage excitations. (c) Schematic of the possible RS mechanism.

Fig. 7. VSTOP voltage-dependent ILRS and IHRS of the (a) positive and (b) negative-bias region (CC?=?10-3 A, calculated @0.5?V). (c) Schematic of the possible RS mechanism.

Fig. 8. Multilevel endurance during (a) CC and (b) -VRESET voltage variation. The memory retention performance during (c) CC and (d) -VRESET voltage variation.

Fig. 9. (a) Schematic of a biological neuron and synapse junction. (b) Potentiation and depression behavior of the Pt/Co3O4/Pt memristive device. Mimicking of different STDP rules such as (c) asymmetric Hebbian, (d) asymmetric anti-Hebbian, (e) symmetric Hebbian, and (f) symmetric anti-Hebbian learning rules with the help of Pt/Co3O4/Pt memristive device.

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