J. Mater. Sci. Technol. ›› 2014, Vol. 30 ›› Issue (11): 1141-1144.DOI: 10.1016/j.jmst.2014.04.015

• Orginal Article • Previous Articles     Next Articles

Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO2 Films

Zhaojun Guo1,2,Liqiang Guo2,Liqiang Zhu2,*,Yuejin Zhu1   

  1. 1 Faculty of Science,Ningbo University,Ningbo 315211,China; 2 Ningbo Institute of Materials Technology & Engineering,Chinese Academy of Sciences,Ningbo 315201,China
  • Online:2014-11-20 Published:2014-12-12
  • Contact: * Corresponding author.Assoc.Prof,Ph.D.; Tel.:t86 574 86690355; E-mail address: lqzhu@nimte.ac.cn (L.Zhu).

Abstract: An indium-zinc-oxide (IZO) based ionic/electronic hybrid synaptic transistor gated by field-configurable nanogranular SiO2 films was reported.The devices exhibited a high current ON/OFF ratio of above 107,a high electron mobility of ~14 cm2 V−1 s−1 and a low subthreshold swing of ~80 mV/decade.The gate bias would modulate the interplay between protons and electrons at the channel/dielectric interface.Due to the dynamic modulation of the transient protons flux within the nanogranular SiO2 films,the channel current would be modified dynamically.Short-term synaptic plasticities,such as short-term potentiation and short-term depression,were mimicked on the proposed IZO synaptic transistor.The results indicate that the synaptic transistor proposed here has potential applications in future neuromorphic devices.