Improvement of the conversion efficiency of Mg3Sb2 thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer

doi:10.1016/j.jmst.2023.05.034

J. Mater. Sci. Technol. ›› 2023, Vol. 168: 208-214.DOI: 10.1016/j.jmst.2023.05.034

• Research Article • Previous Articles Next Articles

Improvement of the conversion efficiency of Mg₃Sb₂ thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer

Huimin Zhang^a, Yachao Wang^a,b, Zuhair A. Munir^c, Yongzhong Zhang^a, Wenhao Fan^d,e,*, Shaoping Chen^a,*

^aCollege of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030024, China;
^bCapital Aerospace Machinery Company, Beijing, 100076, China;
^cDepartment of Material Science and Engineering, University of California, Davis, California, 95616, United States of America;
^dCollege of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, 030024, China;
^eInstrumental Analysis Center of Taiyuan University of Technology, Taiyuan, 030024, China

Received:2023-03-01 Revised:2023-04-22 Accepted:2023-05-15 Published:2024-01-01 Online:2023-12-25
Contact: *E-mail addresses: fanwenhao@tyut.edu.cn (W. Fan), chenshaoping@tyut.edu.cn (S. Chen)

Abstract

Abstract: Mg₃Sb₂-based thermoelectric materials have been the focus of widespread investigations as promising candidates for the harvesting of waste heat. Interface stability and service performance are key points for the commercial applications of these materials. We utilized Mg_4.3Sb₃Ni as a barrier layer to improve the thermal stability of Mg₃Sb₂-based devices. However, its intrinsic high resistivity contributed negatively to the desired performance of the device. In this work, we investigated two other Mg-Sb-Ni ternary phases, MgSbNi and MgSbNi₂, as new barrier layer materials to connect with Mg_3.2Sb₂Y_0.05. The results show that the efficiency of the Mg_1.2SbNi/Mg_3.2Sb₂Y_0.05/Mg_1.2SbNi joint is increased by 33% relative to the higher Mg-content barriers due to lower resistivity. The system exhibited good interfacial compatibility and showed little change with aging at 673 K for 20 days.

Key words: Mg₃Sb₂, Mg_1.2SbNi, Barrier layer, Conversion efficiency

Huimin Zhang, Yachao Wang, Zuhair A. Munir, Yongzhong Zhang, Wenhao Fan, Shaoping Chen. Improvement of the conversion efficiency of Mg₃Sb₂ thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer[J]. J. Mater. Sci. Technol., 2023, 168: 208-214.

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Improvement of the conversion efficiency of Mg₃Sb₂ thermoelectric devices through optimizing the resistivity of the MgSbNi barrier layer

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