Effect of (Ba0.6Sr0.4)TiO3 (BST) Doping on Dielectric Properties of CaCu3Ti4O12 (CCTO)

J. Mater. Sci. Technol. ›› 2012, Vol. 28 ›› Issue (12): 1137-1144.

• Mechanical and Functional Properties of Materials • Previous Articles Next Articles

Effect of (Ba_0.6Sr_0.4)TiO₃ (BST) Doping on Dielectric Properties of CaCu₃Ti₄O₁₂ (CCTO)

I. Norezan, A.K. Yahya, M.K. Talari

Faculty of Applied Sciences, Universiti Teknologi MARA, Shah Alam, Selangor, Malaysia

Received:2012-04-06 Revised:2012-06-13 Online:2012-11-12 Published:2012-11-23
Contact: M.K. Talari
Supported by:
the Malaysian Ministry of Science, Technology and Innovation under Fundamental Research Grant Scheme Nos. UiTM-600-RMI/ST/FRGS 5/3/FST (18/2010) and 600-RMI/ST/FRGS 5/3/FST (203/2010)

Abstract

Abstract:

The effect of (Ba_0.6Sr_0.4)TiO₃(BST) addition on dielectric properties of CaCu₃Ti₄O₁₂ (CCTO) ceramic was investigated. Ceramic samples with the chemical formula (1–x)CaCu₃Ti₄O₁₂ + x(Ba_0.6,Sr_0.4)TiO₃ (x=0, 0.05, 0.1, and 0.2) were synthesized from high purity oxide powders by the conventional solid-state synthesis method. X-ray diffraction (XRD) analysis showed the existence of BST as a secondary phase alongside CCTO. Scanning electron microscopy (SEM) investigation showed a slight decrease in grain size of doped CCTO samples. Density measurements showed that porosity content increased with increasing BST addition indicating low densification due to high melting point secondary phase addition. Dielectric constant of undoped CCTO (x=0) showed lack of stability with frequency which dropped drastically between 10⁴ and 10⁵ Hz and accompanied by high dielectric loss. Addition of BST into CCTO caused the dielectric constant to slightly decrease but improved stability with frequency compared to the undoped sample. The decrease in dielectric constant of doped CCTO samples was suggested to be partly due to the decrease in average grain size and increase in porosity with BST addition. Nevertheless, a high value of dielectric constant was still maintained around ~10⁴ range for all doped samples. The dielectric loss (tanδ) of all BST-doped samples was lower than that of pure CCTO sample at the frequency range of 10³ to 10⁵ Hz probably due to the increase of grains boundary resistivity. The activation energy of grains boundary (E_gb) showed higher values as compared to the activation energy of grains (E_g) for all samples and conforms to the internal barrier layer capacitor (IBLC) model.

Key words: CaCu₃Ti₄O₁₂ (CCTO) , Dielectric properties , (Ba_0.6Sr_0.4)TiO₃ (BST)

I. Norezan, A.K. Yahya, M.K. Talari. Effect of (Ba_0.6Sr_0.4)TiO₃ (BST) Doping on Dielectric Properties of CaCu₃Ti₄O₁₂ (CCTO)[J]. J. Mater. Sci. Technol., 2012, 28(12): 1137-1144.

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Effect of (Ba_0.6Sr_0.4)TiO₃ (BST) Doping on Dielectric Properties of CaCu₃Ti₄O₁₂ (CCTO)

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