Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH4+Ar

J Mater Sci Technol ›› 2009, Vol. 25 ›› Issue (04): 489-491.

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Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH₄+Ar

Hua Cheng^1,3), Aimin Wu^2)†, Jinquan Xiao¹⁾, Nanlin Shi¹⁾, Lishi Wen^1)†

1) Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
2) Dalian University of Technology, Dalian 116024, China
3) Armor Technique Institute of PLA, Changchun 130117, China

Received:2008-05-06 Revised:2008-12-05 Online:2009-07-28 Published:2009-10-10
Contact: Aimin Wu; Lishi Wen

Abstract

Abstract:

Polycrystalline silicon (poly-Si) films were deposited using Ar diluted SiH₄ gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on deposition rate, crystallinity, grain size and the configuration of H existing in poly-Si film were investigated. The results show that, comparing with H₂ dilution, Ar dilution could significantly decrease the concentration of H on the growing surface. When the substrate temperature increased, the deposition rate increased and the concentration of H decreased monotonously, but the crystallinity and the grain size of poly-Si films exhibited sophisticated trends. It is proposed that the crystallinity of the films is determined by a competing balance of the self-diffusion activity of Si atoms and the deposition rate. At substrate temperature of 200°C, the deposited film exhibits the maximum poly-Si volume fraction of 79%. Based on these results, higher substrate temperature is suggested to prepare the poly-Si films with advanced stability and compromised crystallinity at high deposition rate.

Key words: Poly-Si films, ECR-PECVD, Substrate temperature, Ar-dilution

Hua Cheng,Aimin Wu,Jinquan Xiao,Nanlin Shi,Lishi Wen. Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH₄+Ar[J]. J Mater Sci Technol, 2009, 25(04): 489-491.

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Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH₄+Ar

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