[1 ] F.Eugenic, R.Piergeorgio, D.Veronique, X.Andrieu, M.Ronald and K.Hans: J. Power Sources, 1999, 84, 261. [2 ] C.Andrew and B.Paul: J. Power Sources, 2002, 112, 236. [3 ] G.Gunter: J. Power Sources, 1999, 84, 275. [4] G.P.Wendy, E.C.Brian, A.A.William and Julio de Oliveira: J. Power Sources, 1999, 80, 134. [5 ] J.P.Zheng, P.J.Cygan and T.R.Jow: J. Electrochem. Soc., 1995, 142(8), 2699. [6 ] C.C.Hu and K.H.Chang: J. Power Sources, 2002, 112, 401. [7 ] Y.U.Jeong and A.Manthiram: J. Electrochem. Soc., 2001, 148(3), A189. [8] M.Wohlfahrt-Mehrens, J.Schenk, P.M.Wilde, E.Abdelmula, P.Axmann and J.Garche: J. Power Sources, 2002, 105, 182. [9 ] Feibao ZHANG, Yingke ZHOU and Hulin LI: Mater. Chem. Pbys., 2004, 83, 260. [10] S.Venkat and W.W.John: J. Power Sources, 2002, 108(1-2), 15. [11] Junhua JIANG and A.Kucernak: Electrochim. Acta, 2002, 47, 2381. [12] Xianming LIU, Yihe ZHANG, Xiaogang ZHANG and Shaoyun FU: Electrochim. Acta, 2004, 49, 3137. [13] L.A.De Faria and S.Trasatti: J. Electroanal. Chem., 2003, 554/555, 355. [14] R.P.Kalakodimi and M.Norio: Electrochem.Comm., 2004, 6, 1004. [15] R.de S.Adriana, A.Everaldo, G.Helder and A.F.L.Tania: Electrochim. Acta, 2004, 49, 2015. [16] N.L.Wu: Mater. Chem. Phys., 2002, 75, 6. [17] M.P.Pechini: U.S.Patent, No.3330697, July 11, 1967. [18] Maoxiang JING, Xiangqian SHEN and Ytijun SHEN: J. Inorg. Mater., 2004, 19(2), 289. (in Chinese) [19] M.Marjan, Z.Klementina and M.Jadran: J. Power Sources, 2002, 106, 180. [20] Xing SHAN and Minlin ZHANG: J. Funct. Mater. Devices, 2002, 8(1), 37. (in Chinese) [21] W.Sugimoto, T.Kizaki, K.Yokoshima, Y.Murakami and Y.Takasu: Electrochim. Acta, 2004, 49, 313. [22] Xiangqian SHEN, Maoxiang JING, Jianxin ZHOU and Yujun SHEN: J. Funct. Mater., 2005, 36(9), 1459. |