Abstract: Conductance behaviours of resonant tunneling junction with elementary, second and third Sier pinskii structures are considered. Numerical calculation shows that a tunneling junction with higher order fractal structure possesses more meticulous resonant behaviour. It provides the possibility of fabricating exact energy selecting tunneling devices. The structure of tunneling junction can be determined by experimental observation. The energetic spectrum of such device is supposed to be a fractal one. The effect of electrode is alteration of the shape and maximum of conductance peaks.