J Mater Sci Technol ›› 1997, Vol. 13 ›› Issue (4): 299-301.
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M. Ohyama(Dept. of Electrical Engineering, Tokyo National College of Technology, Tokyo, Japan)
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Abstract: The structure, electrical transport, and optical properties of GaSe films fabricated by means of radio-frequency (RF) magnetron sputtering in Ar were investigated. The as-sputtered GaSe films were amorphous, and their optical energy gap Eg are 1.9～2.6 eV. The effect of the synthesis conditions on the optical and electrical properties of the GaSe films has also been studied
M. Ohyama(Dept. of Electrical Engineering, Tokyo National College of Technology, Tokyo, Japan). Electrical and Optical Properties of Gase Thin Films[J]. J Mater Sci Technol, 1997, 13(4): 299-301.
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https://www.jmst.org/EN/Y1997/V13/I4/299
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