J Mater Sci Technol ›› 1996, Vol. 12 ›› Issue (4): 312-314.

• Articles • Previous Articles     Next Articles

Characterization of C-N Thin Films Prepared by Ion Beam Sputtering

Yongjun TIAN; Xuejun REN; Dongli YU; Julong HE; Shizhen CHEN and Dongchun LI(Dept. of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004, China)Richeng YU, Ming ZHANG and Winkui WANG(Institute of Physics, Chinese Academy of Sciences   

  • Received:1996-07-28 Revised:1996-07-28 Online:1996-07-28 Published:2009-10-10

Abstract: C-N thin films have been prepared by ion beam sputtering using pure N2 as discharge gas. The ratio N/C of the films measured by Auger spectrum is 20% on an average. The results of X-ray diffraction and transmission electron microscopy show that β-C3N4 phase exists in the films. Xray photoelectron spectroscopy shows that nitrogen is mostly combined with carbon with triple (C=N) and double (C=N) bonds. The IR absorption shows an absorption bond near 2185 cm-1assigned to the C=N, no trace of C-C bond was observed