Two-dimensional wide-bandgap NbMoO6 for field-effect transistors and UV photodetectors

doi:10.1016/j.jmst.2025.08.004

J. Mater. Sci. Technol. ›› 2026, Vol. 253: 159-165.DOI: 10.1016/j.jmst.2025.08.004

• Research article • Previous Articles Next Articles

Two-dimensional wide-bandgap NbMoO₆ for field-effect transistors and UV photodetectors

Yong Zhang^a,1, Lin Wang^b,1, Pin Zhao^b,1, Xiujun Wang^b, Yatong Wang^b, Minxing Du^b, Xiaosheng Fang^c,*

^aSchool of Electronic and Information Engineering, Suzhou University of Technology, Changshu 215500, China;
^bDivision of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
^cCollege of Smart Materials and Future Energy and State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai 200438, China

Received:2025-06-11 Revised:2025-07-28 Accepted:2025-08-10 Published:2026-05-10 Online:2026-05-07
Contact: ^*E-mail address: xshfang@fudan.edu.cn (X. Fang).
About author:¹ These authors contributed equally to this work.

Abstract

Abstract: Two-dimensional (2D) wide-bandgap oxides show great potential as candidates for next-generation multifunctional devices. High dielectric (high-κ) and photoactive 2D NbMoO₆ (NMO) is engineered for field-effect transistors and ultraviolet (UV) photodetectors. The NMO nanosheets are synthesized by solid-phase calcination, proton exchange, and liquid-phase exfoliation process. NMO, with a high dielectric constant (∼31.1), can serve as a gate dielectric for a semiconducting single-walled carbon nanotubes (s-SWCNTs) field-effect transistor, displaying a high on/off ratio of 5 × 10⁴ at a low operating voltage of -5 V. Meanwhile, an individual NMO nanosheet photodetector exhibits high responsivity (210 A/W) and high detectivity (2.58×10¹² Jones) at 3 V at 320 nm. Furthermore, NMO nanosheet film photodetectors show great potential for application in UV image sensing. This work not only provides a new candidate for 2D electronic and optoelectronic devices but also introduces a feasible strategy to explore 2D oxides for various applications.

Key words: UV photodetectors, Wide-bandgap oxides, NbMoO₆ nanosheets

Yong Zhang, Lin Wang, Pin Zhao, Xiujun Wang, Yatong Wang, Minxing Du, Xiaosheng Fang. Two-dimensional wide-bandgap NbMoO₆ for field-effect transistors and UV photodetectors[J]. J. Mater. Sci. Technol., 2026, 253: 159-165.

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Two-dimensional wide-bandgap NbMoO₆ for field-effect transistors and UV photodetectors

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