Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (BixSb1-x)2Te3 nanoplates

doi:10.1016/j.jmst.2024.12.064

Abstract

Abstract: We report a systematic study on the transport properties of (Bi_0.2Sb_0.8)₂Te₃ and (Bi_0.4Sb_0.6)₂Te₃ nanoplates with a thickness of about 6 nm grown by chemical vapor deposition (CVD) on Si/SiO₂ substrate. We achieve a significant ambipolar field effect in the two samples with different compositions by applying back-gate voltage, successfully tuning the Fermi level across the Dirac point of surface states. It is found that the Hall resistance exhibits strong non-linear behavior and magnetic field induced sign change of the slope when the Fermi level is near the Dirac point, indicating the coexistence of n-type and p-type carriers. Moreover, this coincides with the striking crossover from weak antilocalization (WAL) to linear magnetoresistance (LMR). These gate and temperature dependent magneto-transport studies provide a deeper insight into the nature of LMR and WAL in topological materials.

Key words: Topological insulators, Non-saturating linear magnetoresistance (LMR), Weak antilocalization (WAL), Nonlinear Hall resistance, Ambipolar field effect

Tingting Li, Xudong Shi, Mingze Li, Xuan P.A. Gao, Zhenhua Wang, Zhidong Zhang. Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (Bi_xSb_1-_x)₂Te₃ nanoplates[J]. J. Mater. Sci. Technol., 2025, 230: 236-243.

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Linear magnetoresistance, weak antilocalization and electron-hole coexistence in gate tunable topological insulator (Bi_xSb_1-_x)₂Te₃ nanoplates

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