J. Mater. Sci. Technol. ›› 2025, Vol. 219: 59-74.DOI: 10.1016/j.jmst.2024.11.002

• Research article • Previous Articles     Next Articles

Triethoxysilane-derived silicon quantum dots: A novel pathway to small size and high crystallinity

Yizhou Hea,b,1, Qianxi Haoa,b,1, Xue Yangc,*, Jiamin Yuc, Chi Zhanga,b, Ruoyu Lia,b, Qi Wanga,b, Shaorong Lia, Xiaowei Guo*, Serguei K. Lazaroukd   

  1. aSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
    bYangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China (UESTC), Huzhou 313001, China
    cChina National Tobacco Corporation Sichuan Company, Chengdu 610041, China
    dBelarusian State University of Informatics and Radioelectronics, P. Browka 6, Minsk 220013, Belarus
  • Received:2023-12-30 Revised:2024-09-05 Accepted:2024-11-06 Published:2024-09-16 Online:2025-06-05
  • Contact: *E-mail addresses:202211050822@std.uestc.edu.cn (Y. He),202221050717@std.uestc.edu.cn (Q. Hao),280055419@qq.com (X. Yang),gxw@uestc.edu.cn (X. Guo)
  • About author:1These authors contributed equally to the work.

Abstract: The crystalline fraction is a critical parameter for assessing the quality of silicon quantum dots (SiQDs), and its enhancement is anticipated to improve the optoelectronic performance of these materials. However, achieving a high crystalline fraction in small-sized SiQDs produced through the pyrolysis of hydrogen silsesquioxane (HSQ) polymers remains a significant challenge. In this study, we successfully synthesized SiQDs with a diameter of 3.24 nm and a crystalline fraction of 98.4% by optimizing the triethoxysilane (TES)/aqueous hydrochloric acid (HCl) volume ratio during the hydrolysis-condensation process. The SiQDs exhibited a photoluminescence (PL) center at 764.1 nm and an average PL quantum yield (PLQY) of 24.4%. Our findings demonstrate that the TES/aqueous HCl volume ratio significantly influences the proportion of cage structure and the cross-linking density of the network structure in HSQ polymers, which in turn governs SiQD size and crystalline fraction. A high proportion of cage structures in HSQ polymers contributes to high crystallinity. Notably, an increased cross-linking density within the network structure results in higher and more uniform diffusion barriers. This phenomenon not only hinders the diffusion of silicon atoms, which leads to smaller SiQD size, but also facilitates the achievement of high crystalline fraction due to uniform diffusion. This work presents a novel approach to achieving high crystallinity in small SiQDs, with implications for advanced applications in lighting, display technologies, medical imaging, and photovoltaics.

Key words: Silicon quantum dots, Network structure, Cross-linking density, Crystalline fraction, Photoluminescence, HSQ polymers