Abstract: The oxide dispersion strengthening (ODS) high entropy alloy (HEA) exhibits the high elevated temperature performance and radiation resistance due to severe atomic lattice distortion and oxide particles dispersed in matrix, which is expected to become the most promising structural material in the next generation of nuclear energy systems. However, microstructure and damage evolution of irradiated ODS HEA under loading remain elusive at submicron scale using the existing simulations owing to a lack of atomic-lattice-distortion information from a micromechanics description. Here, the random field theory informed discrete dislocation dynamics simulations based on the results of high-resolution transmission electron microscopy are developed to study the dislocation behavior and damage evolution in ODS HEA considering the influence of severe lattice distortion and nanoscale oxide particle. Noteworthy, the damage behavior shows an unusual trend of the decreasing-to-increasing transition with the continuous loading process. There are two main types of damage micromechanics generated in irradiated ODS HEA: the dislocation loop damage in which the damage is controlled by irradiation-induced dislocation loops and their evolution, the strain localization damage in which the damage comes from the dislocation multiplication in the local plastic region. The oxide particle hinders the dislocation movement in the main slip plane, and the lattice distortion induces the dislocation sliding to the secondary slip plane, which promotes the dislocation cross-slip and dislocation loop annihilation, and thus reduces the material damage in the elastic damage stage. These findings can deeply understand atomic-scale damage mechanism and guide the design of ODS HEA with high radiation resistance.

Key words: Oxide dispersion strengthening, High entropy alloy, Radiation, Dislocation, Damage model