Resistance modulation in Ge2Sb2Te5

doi:10.1016/j.jmst.2020.03.016

Abstract

Abstract:

Chalcogenide based phase change random access memory (PCRAM) holds great promise for high speed and large data storage applications. This memory is scalable, requires a low switching energy, has a high endurance, has fast switching speed, and is nonvolatile. However, decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory. Here we demonstrate high speed and high endurance ultrafast transient switching in the SET state of a prototypical phase change memory cell. Volatile switching is modeled by electron-phonon and lattice scattering on short timescales and charge carrier excitation on long timescales. This volatile switching in phase change materials enables the design of hybrid memory modulators and ultrafast logic circuits.

Key words: Phase change memory, Transient resistance, Volatile, Scattering, Charge carrier excitation, Large endurance

Jitendra K. Behera, WeiJie Wang, Xilin Zhou, Shan Guan, Wu Weikang, Yang A. Shengyuan, Robert E. Simpson. Resistance modulation in Ge₂Sb₂Te₅[J]. J. Mater. Sci. Technol., 2020, 50: 171-177.

Figures/Tables 5

Fig. 1. (a) Schematic of the resistance modulation (volatile switching) of Ge2Sb2Te5 in a PCRAM device in its SET state. (b) A quarter-cut diagram of the pore-like PCRAM cell. (c) Schematic diagram of a transient resistance measurement setup. (d) Post-pulse resistance of the PCRAM cell as a function of voltage with different pulse duration. The blue regions represent the amorphous state (RESET), and the red region represents the crystalline state (SET) of the materials during the RESET process. (e) Typical colour map of voltage-time-electrical resistance dependence of the PCRAM cell. The colour scale represents the change in resistance of the PCRAM cell. The plot has three distinct regions: 1, high resistance state (red); 2, intermediate resistance state (green); and 3, low resistance state (blue).

Fig. 2. (a) The atomic layer sequence for FCC Ge2Sb2Te5 in a hexagonal setting. Electronic band structure of the crystalline Ge2Sb2Te5 slab in the FCC phase (b) without electric field (E-field?=?0?eV/?), and (c) with electric field (E-field?=?0.01?eV/?). The electric field has no significant effect on band gap.

Fig. 3. Simulated temperature profile of the half cross-section of a planer pore structure PCRAM cell. Temperature profiles of the cell with different applied voltages: (a) 0.5?V (b) 1.5?V (c) 2.0?V, and (d) 2.5?V after a 60?ns pulse. The peak temperature of the phase change component Ge2Sb2Te5 was calculated in the SET state.

Fig. 4. (a) Time-dependent resistance change of the PCRAM cell when a voltage pulse of 2.4?V, 60?ns is applied in the crystalline state. (b) Resistivity change as a function of the memory cell’s temperature. The inset image shows the modelled time-dependent temperature of the memory cell of a 2.4?V, 60?ns voltage pulse.

Fig. 5. (a) Schematic of the ultrashort voltage pulse train applied to the memory cell. (b) Endurance measurement of the SET phase of a PCRAM cell of the voltage pulse of 1.2?V, 10?ns with a 1?μs of pulse separation. The memory cells are reversibly switched up to109 cycles with three times resistance ratio.

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Resistance modulation in Ge₂Sb₂Te₅

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