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J. Mater. Sci. Technol. 2008, 24(04) 457-472  DOI:      ISSN: 1005-0302 CN: 21-1315/TG
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Keywords
Zinc Oxide
One-dimensional
Nanomaterials
Controlled synthesis
Authors
Shulin JI
Changhui YE
PubMed
Article by
Article by

Synthesis, Growth Mechanism, and Applications of Zinc Oxide Nanomaterials

Shulin JI, Changhui YE

Anhui Key Laboratory of Nanomaterials and Technology and Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

Abstract：

This article reviews recent progresses in growth mechanism, synthesis, and applications of zinc oxide nanomaterials (mainly focusing on one-dimensional (1D) nanomaterials). In the first part of this article, we briefly introduce the importance, the synthesis methods and growth mechanisms, the properties and applications of ZnO 1D nanomaterials. In the second part of this article, the growth mechanisms of ZnO 1D nanomaterials will be discussed in detail in the framework of vapor-liquid-solid (VLS), vapor-solid (VS), and aqueous solution growth (ASG) approaches. Both qualitative and quantitative information will be provided to show how a controlled synthesis of ZnO 1D nanomaterials can be achieved. In the third part of this article, we present recent progresses in our group for the synthesis of ZnO 1D nanomaterials, and the results from other groups will only be mentioned briefly. Especially, experiment designing according to theories will be elaborated to demonstrate the concept of controlled synthesis. In the fourth part of this article, the properties and potential applications of ZnO 1D nanomaterials will be treated. Finally, a summary part will be presented in the fifth section. The future trend of research for ZnO 1D nanomaterials will be pointed out and key issues to be solved will be proposed.

Keywords： Zinc Oxide   One-dimensional   Nanomaterials   Controlled synthesis   
Received 2008-03-03 Revised 1900-01-01 Online: 2009-10-10 
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Email: chye@issp.ac.cn
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References：
[1]D.P.Norton,Y.W.Heo,M.P.Ivill,K.Ip,S.J.Pearton, M.F.Chisholm and T.Steiner:Mater.Today,2004, 7(6),34.
[2] M.Kawasaki,A.Ohtomo,I.Ohkubo,H.Koinuma, Z.K.Tang,P.Yu,G.K.L.Wong,B.P.Zhang and Y.Segawa: Mater.Sci.Eng.B, 1998, 56, 239.
[3] H.Cao,J.Y.Xu,D.Z.Zhang,S.H.Chang,S.T.Ho, E.W.Seelig,X.Liu and R.P.H.Chang: Phys.Rev. Lett, 2000, 84, 5584.
[4] M.H.Huang,S.Mao,H.Feick,H.Yan,Y.Wu,H.Kind, E.Weber,R.Russo and P.Yang: Science, 2001, 292, 1897.
[5] S.Hirano,N.Takeuchi,S.Shimada,K.Masuya,K.Ibe, H.Tsunakawa and M.Kuwabara: J.Appl.Phys, 2005, 98, 094305.
[6] A.B.Balashov,N.P.Golubeva and B.S.Skidan: Glass Ceram, 1999, 56, 58.
[7] V.A.Karpina,V.I.Lazorenko,C.V.Lashkarev, V.D.Dobrowolski,L.I.Kopylova,V.A.Baturin, S.A.Pustovoytov,A.Ju.Karpenko,S.A.Eremin, P.M.Lytvyn,V.P.Ovsyannikov and E.A.Mazurenko: Cryst.Res.Technol, 2004, 39, 980.
[8] M.Joseph,H.Tabata and T.Kawai: Appl.Phys.Lett, 1999, 74, 2534.
[9] N.Koshizaki and T.Oyama: Sensor.Actuat.B- Chem, 2000, 66, 119.
[10] T.Gao and T.H.Wang: Appl.Phys.A, 2005, 80, 1451.
[11]A.Z.Sadek,S.Choopun,W.Wlodarski,S.J.Ippolito and K.Kalantar-zadeh:IEEE Sens.J.,2007,7,919.
[12] L.J.Bie,X.N.Yan,J.Yin,Y.Q.Duan,Y.Q.Duan and Z.H.Yuan: Sensor.Actuat.B-Chem, 2007, 126, 604.
[13]R.A.Mansoori,S.Kothari and R.Ameta:J.Ind. Chem.Soc.,2004,81,335.
[14] L.Q.Jing,B.Q.Wang,B.F.Xin,S.D.Li,K.Y.Shi, W.M.Cai and H.G.Fu: J.Solid State Chem, 2004, 177, 4221.
[15] C.H.Ye,Y.Bando,G.Z.Shen and D.Golberg: J.Phys. Chem.B, 2006, 110, 15146.
[16] M.A.Behnajady,N.Modirshahla and R.Hamzavi: J. Hazard.Mater, 2006, 133, 226.
[17] Y.W.Zhu,H.Z.Zhang,X.C.Sun,S.Q.feng,J.Xu, Q.Zhao,B.Xiang,R.M.Wang and D.P.Yu: Appl. Phys.Lett, 2003, 83, 144.
[18] Q.Wan,K.Yu,T.H.Wang and C.L.Lin: Appl.Phys. Lett, 2003, 83, 2253.
[19] D.Banerjee,S.H.Jo and Z.F.Ren: Adv.Mater, 2004, 16, 2028.
[20] C.H.Ye,Y.Bando,X.S.Fang,G.Z.Shen and D.Golberg: J.Phys.Chem.C, 2007, 111, 12673.
[21] X.D.Wang,J.Zhou,C.S.Lao,J.H.Song,N.S.Xu and Z.L.Wang: Adv.Mater, 2007, 19, 1627.
[22] C.C.Lin,H.P.Chen and S.Y.Chen: Chem.Phys. Lett, 2005, 404, 30.
[23] V.A.Fonoberov and A.A.Balandin: J.Nanoelectron. Optoelectron, 2006, 1, 19.
[24] R.Ghosh,S.Fujihara and D.Basak: J.Electron. Mater, 2006, 35, 1728.
[25] K.Keem,J.Kang,D.Y.Jeong,B.Min,K.Cho,H.Kim, S.Kim and Y.K.Kim: Jpn.J.Appl.Phys, 2007, 46, 4355.
[26] P.V.Radovanovic and D.R.Gamelin: Phys.Rev. Lett, 2003, 91, 157202.
[27] P.Sharma,A.Gupta,K.V.Rao,F.J.Owens, R.Sharma,R.Ahuja,J.M.O.Guillen,B.Johansson and G.A.Gehring: Nat.Mater, 2003, 2, 673.
[28] T.Meron and G.Markovich: J.Phys.Chem.B, 2005, 109, 20232.
[29] K.R.Kittilstved,D.A.Schwartz,A.C.Tuan,S.M.Heald, S.A.Chambers and D.R.Gamelin: Phys.Rev.Lett, 2006, 97, 037203.
[30] D.Karmakar,S.K.Mandal,P.M.Kadam,P.L.Paulose, A.K.Rajarajan,T.K.Nath,A.K.Das,I.Dasgupta and G.P.Das: Phys.Rev.B, 2007, 75, 144404.
[31] Y.C.Kong,D.P.Yu,B.Zhang,W.Fang and S.Q.Feng: Appl.Phys.Lett, 2001, 78, 407.
[32] J.Zhang,L.D.Sun,H.Y.Pan,C.S.Liao and C.H.Yan: New J.Chem, 2002, 26, 33.
[33] Y.Li,G.W.Meng,L.D.Zhang and F.Philipp: Appl. Phys.Lett, 2000, 76, 2011.
[34] Y.C.Wang,I.C.Leu and M.H.Hon: J.Mater.Chem, 2002, 12, 2439.
[35] S.H.Jung,E.Oh,K.H.Lee,W.Park and S.H.Jeong: Adv.Mater, 2007, 19, 749.
[36] X.L.Hu,Y.J.Zhu and S.W.Wing: Mater.Chem. Phys, 2004, 88, 421.
[37] R.S.Wagner and W.C.Ellis: Appl.Phys.Lett, 1964, 4, 89.
[38] G.W.Sears: Acta Metall, 1955, 3, 361.
[39]L.Vayssieres:Int.J.Nanotechnol.,2004,1,1.
[40] Z.W.Pan,Z.R.Dai and Z.L.Wang: Science, 2001, 291, 1947.
[41]Y.Dai,Y.Zhang and Z.L.Wang:Solid State Commun., 2003,126,629.
[42] P.X.Gao and Z.L.Wang: J.Am.Chem.Soc, 2003, 125, 11299.
[43] P.X.Gao and Z.L.Wang: Appl.Phys.Lett, 2004, 84, 2883.
[44] R.S.Yang,Y.Ding and Z.L.Wang: Nano Lett, 2004, 4, 1309.
[45] X.Y.Kong,Y.Ding,R.S.Yang and Z.L.Wang: Science, 2004, 303, 1348.
[46] P.X.Gao and Z.L.Wang: Small, 2005, 1, 945.
[47] P.X.Gao,C.S.Lao,W.L.Hughes and Z.L.Wang: Chem. Phys.Lett, 2005, 408, 174.
[48] P.X.Gao,Y.Ding,W.J.Mai,W.L.Hughes,C.S.Lao and Z.L.Wang: Science, 2005, 309, 1700.
[49] C.S.Lao,P.X.Gao,R.S.Yang,Y.Zhang,Y.Dai and Z.L.Wang: Chem.Phys.Lett, 2006, 417, 358.
[50] X.D.Wang,J.H.Song and Z.L.Wang: Chem.Phys. Lett, 2006, 424, 86.
[51] X.Y.Kong and Z.L.Wang: Nano Lett, 2003, 3, 1625.
[52] X.Y.Kong and Z.L.Wang: Appl.Phys.Lett, 2004, 84, 975.
[53] Z.L.Wang: J.Mater.Chem, 2005, 15, 1021.
[54] E.I.Givaxgizov: J.Cryst.Growth, 1975, 31, 20.
[55]E.I.Givargizov:Highly Anisotropic Crystals,D.Reidel Publishing Company,Dordrecht,Holland,1987,100.
[56] G.A.Bootsma and H.J.Gassen: J.Cryst.Growth, 1971, 10, 223.
[57] Z.W.Pan,S.Dai,C.M.Rouleau and D.H.Lowndes: Angew.Chem.Int.Edit, 2005, 44, 274.
[58] Y.Ding,P.X.Gao,and Z.L.Wang: J.Am.Chem.Soc, 2004, 126, 2066.
[59] R.L.Parker: J.Chem.Phys, 1962, 37, 1600.
[60] V.A.Nebol'sin and A,A.Shchetinin: Inorg.Mater, 2003, 39, 899.
[61] A.I.Persson,M.W.Larsson,S.Stenstrom,B.J.Ohlsson, L.Samuelson and L.R.Wallenberg: Nat.Mater, 2004, 3, 677.
[62] T.I.Kamins: J.Appl.Phys, 2001, 89, 1008.
[63] K.A.Dick,K.Deppert,L.S.Karlsson,L.R.Wallenberg, L.Samuelson and W.Seifert: Adv.Funct.Mater, 2005, 15, 1603.
[64] S.Kodambaka,J.Tersoff,M.C.Reuter and F.M.Ross: Science, 2007, 316, 729.
[65] T.Tan,N.Li and U.G(?)sele: Appl.Phys.Lett, 2003, 83, 1199.
[66] M.V.Chernysheva,A.A.Eliseev,K.S.Napolskii, A.V.Lukashin,Y.D.Tretyakov,N.A.Grigoryeva, S.V.Grigoryev and M.Wolff: Thin Solid Films, 2006, 495, 73.
[67] A.Fukuoka,Y.Sakamoto,T.Higuchi,N.Shimomura and M.Ichikawa: J.Porous Mater, 2006, 13, 231.
[68] R.Campbell,M.G.Bakker,G.Havrilla,V.Montoya, E.A.Kenik and M.Shamsuzzoha: Micropor.Mesopor. Mat, 2006, 97, 114.
[69] J.Xu,W.H.Zhang,M.A.Morris and J.D.Holmes: Mater.Chem.Phys, 2007, 104, 50.
[70] S.Inoue,N.Koshizaki and T.Kodaira: Int.J.Mod. Phys.B, 2005, 19, 2817.
[71] S.H.Lee,T.Y.Lee,J.H.Han,P.S.Alegaonkar, A.S.Berdinsky,D.G.Kuvshinov,J.B.Yoo and C.Y.Park: Diam.Relat.Mater, 2005, 14, 1876.
[72] J.P.Zhai,Z.K.Tang,X.J.Hu,X.X.Zhang and P.Sheng: Phys.Status Solidi B, 2006, 243, 3082.
[73] W.K.Burton,N.Cabrera and F.C.Frank: Nature, 1949, 163, 398.
[74] W.K.Burton,N.Cabrera and F.C.Frank: Philos.T. Roy.S-A, 1951, 243, 299.
[75] G.W.Sears: Acta Metall, 1953, 1, 457.
[76] G.W.Sears: Acta Metall, 1955, 3, 361.
[77] G.W.Sears: Acta Metall, 1955, 3, 367.
[78] S.S.Brenner: Acta Metall, 1956, 4, 62.
[79] R.V.Coleman and G.W.Sears: Acta Metall, 1957, 5, 131.
[80] C.R.Morelock and G.W.Sears: J.Chem.Phys, 1959, 31, 926.
[81] S.S.Brenner and G.W.Sears: Acta Metall, 1956, 4, 268.
[82] R.Gomer: J.Chem.Phys, 1958, 28, 457.
[83] R.L.Parker,R.L.Anderson and S.C.Hardy: Appl. Phys.Lett, 1963, 3, 93.
[84] J.P.Hirth and G.M.Pound: J.Phys.Chem, 1960, 64, 619.
[85] R.L.Parker and S.C.Hardy: J.Chem.Phys, 1962, 37, 1606.
[86] J.M.Blakkly and K.A.Jackson: J.Chem.Phys, 1962, 37, 428.
[87] V.Ruth and J.P.Hirth: J.Chem.Phys, 1964, 41, 3139.
[88] R.Gomer: J.Chem.Phys, 1963, 38, 273.
[89] C.M.Drum and J.W.Mitchell: Appl.Phys.Lett, 1964, 4, 164.
[90] W.W.Webb,R.D.Dragsdorf and W.D.Forgeng: Phys. Rev, 1957, 108, 498.
[91] C.Herring: Phys.Rev, 1951, 82, 87.
[92] E.Kaldis: J.Cryst.Growth, 1969, 5, 376.
[93] G.W.Sears: J.Chem.Phys, 1956, 25, 154.
[94] K.Thornton,N.Akaiwa and P.W.Voorhees: Acta Mater, 2004, 52, 1353.
[95] G.Madras and B.J.McCoy: Chem.Eng.Sci, 2004, 59, 2753.
[96]D.J.Horntrop:J.Comput.Phys.,2006,16,1679.
[97] M.Nespolo and G.Ferraris: Eur.J.Mineral, 2004, 16, 401.
[98] E.J.H.Lee,C.Ribeiro,E.Longo and E.R.Leite: J. Phys.Chem.B, 2005, 109, 20842.
[99] H.C.Zeng: Int.J.Nanotechnol, 2007, 4, 329.
[100] I.M.Lifshitz and V.V.Slyozov: J.Phys.Chem.Solids, 1961, 19, 35.
[101]C.Wagner:Z.Elektrochem.,1961,65,581.
[102]C.Ribeiro,E.J.H.Lee,E.Longo and E.R.Leite:Chem. Phys.Chem.,2005,6,690.
[103] A.P.Alivisatos: Science, 2000, 289, 736.
[104] R.L.Penn,G.Oskam,T.J.Strathmann,P.C.Searson, A.T.Stone and D.R.Veblen: J.Phys.Chem.B, 2001, 105, 2177.
[105] J.F.Banfield,S.A.Welch,H.Z.Zhang,T.T.Ebert and R.L.Penn: Science, 2000, 289, 751.
[106] F.Huang,H.Z.Zhang and J.F.Banfield: Nano Lett, 2003, 3, 373.
[107] L.Vayssieres: Int.J.Nanotechnol, 2005, 2, 411.
[108] Z.L.Wang,X.Y.Kong and J.Zuo: Phys.Rev.Lett, 2003, 91, 185502.
[109] S.Y.Li,C.Y.Lee and T.Y.Tseng: J.Cryst.Growth, 2003, 247, 357.
[110] D.Banerjee,J.Y.Lao,D.Z.Wang,J.Y.Huang,Z.F.Ren, D.Steeves,B.Kimball and M.Sennett: Appl.Phys. Lett, 2003, 83, 2061.
[111] Y.J.Li,L.P.Lou,R.Duan,P.B.Shi and G.G.Qin: Solid State Commun, 2004, 129, 233.
[112] J.W.Zhao,C.H.Ye,X.S.Fang,L.R.Qin and L.D.Zhang: Cryst.Growth Des, 2006, 6, 2643.
[113] G.M.Hua,Y.Zhang,C.H.Ye,M.Wang and L.D.Zhang: Nanotechnolgy, 2007, 18, 145605.
[114] M.Wang,C.H.Ye,Y.Zhang,G.M.Hua,H.X.Wang, M.G.Kong and L.D.Zhang: J.Cryst.Growth, 2006, 291, 334.
[115] C.H.Ye,X.S.Fang,Y.F.Hao,X.M.Teng and L.D.Zhang: J.Phys.Chem.B, 2005, 109, 19758.
[116] X.S.Fang,C.H.Ye,L.D.Zhang,Y.Li and Z.D.Xiao: Chem.Lett, 2005, 34, 436.
[117] L.Yang,Y.Li,Y.H.Xiao,C.H.Ye and L.D.Zhang: Chem.Lett, 2005, 34, 828.
[118] J.F.Li,L.Z.Yao,C.H.Ye,C.M.Mo,W.L.Cai,Y.Zhang and L.D.Zhang: J.Cryst.Growth, 2001, 223, 535.
[119] L.Vayssieres,K.Keis,S.E.Lindquist and A.Hagfeldt: J.Phys.Chem.B, 2001, 105, 3350.
[120] K.Govender,D.S.Boyle,P.OBrien,D.Binks,D.West and D.Coleman: Adv.Mater, 2002, 14, 1221.
[121] J.H.Choy,E.S.Jang,J.H.Won,J.H.Chung,D.J.Jang and Y.W.Kim: Adv.Mater, 2003, 15, 1911.
[122] L.E.Greene,M.Law,J.Goldberger,F.Kim, J.C.Johnson,Y.Zhang,R.J.SaykaUy and P.Yang: Angew.Chem.Int.Edit, 2003, 42, 3031.
[123] L.E.Greene,M.Law,D.H.Tan,M.Montano, J.Goldberger,G.Somorjai and P.Yang: Nano Lett, 2005, 5, 1231.
[124] L.Vayssieres: Adv.Mater, 2003, 15, 464.
[125] J.Yahiro,Y.Oaki and H.Imai: Small, 2006, 2, 1183.
[126] Y.Sun,G.M.Fuge,N.A.Fox,D.J.Riley and M.N.R.Ashfold: Adv.Mater, 2005, 17, 2477.
[127] Y.F.Zhang,R.E.Russo and S.S.Mao: Appl.Phys. Lett, 2005, 87, 133115.
[128] R.C.Wang,C.P.Liu,J.L.Huang and S.J.Chen: Appl. Phys.Lett, 2005, 86, 251104.
[129] S.W.Kim,S.Fujita and S.Fujita: Appl.Phys.Lett, 2005, 86, 153119.
[130] E.C.Greyson,Y.Babayan and T.W.Odom: Adv. Mater, 2004, 16, 1348.
[131] C.Y.Nam,D.Tham and J.E.Fischer: Appl.Phys. Lett, 2004, 85, 5676.
[132] R.A.Laudise and A.A.Ballman: J.Phys.Chem, 1960, 64, 688.
[133] Y.Ding,X.Y.Kong and Z.L.Wang: Phys.Rev.B, 2004, 70, 235408.
[134] B.Liu and H.C.Zeng: J.Am.Chem.Soc, 2005, 127, 18262.
[135] C.L.Hsu,S.J.Chang,Y.R.Lin,P.C.Li,T.S.Lin, S.Y.Tsai,T.H.Lu and I.C.Chen: Chem.Phys.Lett, 2005, 416, 75.
[136] D.I.Suh,S.Y.Lee,T.H.Kim,J.M.Chun,E.K.Suh, O.B.Yang and S.K.Lee: Chem.Phys.Lett, 2007, 442, 348.
[137] H.Pan,J.Z.Luo,H.Sun,Y.P.Feng,C.K.Poh and J.Y.Lin: Nanotechnolgy, 2006, 17, 2963.
[138] X.D.Wang,J.H.Song,J.Liu and Z.L.Wang: Science, 2007, 316, 102.
[139] R.Narayanan and M.A.El-Sayed: Nano Lett, 2004, 4, 1343.
[140]F.Xu,K.Yu,G.D.Li,Q.Li and Z.Q.Zhu:Nanotech- nolgy,2006,17,2855.
[141] Z.Xu,X.D.Bai and E.G.Wang: Appl.Phys.Lett, 2006, 88, 133107.
[142] Q.Zhao,H.Z.Zhang,Y.W.Zhu,S.Q.Feng,X.C.Sun, J.Xu and D.P.Yu: Appl.Phys.Lett, 2005, 86, 203115.
[143] C.J.Edgcombe and U.Valdre: Phil Mag.B, 2002, 82, 987.
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