Abstract: 2×(FeNi/CoZnO)/ZnO/(CoZnO/Co) ×2 spin-injection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2×(FeNi/CoZnO) and (CoZnO/Co) ×2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.

Key words: Spin injection, Magnetoresistance, Ferromagnetic semiconductor